Ayyildiz, ETemirci, CBati, BTürüt, A2025-05-102025-05-1020010020-721710.1080/002072101100443962-s2.0-0041968870https://doi.org/10.1080/00207210110044396https://hdl.handle.net/20.500.14720/14545This work presents an attempt related to the importance of the fact that the series resistance value is considered in calculating the interface state density distribution from the non-ideal forward bias current-voltage (I-V) characteristics of Au/n-Si Schottky barrier diodes (SBDs). To examine the consistency of this approach, Au/n-Si SBDs with Si bulk thicknesses of 200 and 400 mum have been prepared. Both diodes showed non-ideal I-V behaviour with ideality factors of 1.14 and 1.12, respectively, and thus it has been thought that the diodes have a metal-interface layer-semiconductor configuration. At the same energy position near the bottom of the conduction band, the interface state density (N-SS) values, without taking into account the series resistance value of the devices, are almost one order of magnitude larger than the N-SS values obtained taking into account the series resistance value.eninfo:eu-repo/semantics/closedAccessArticle886Q4Q3625633WOS:000169284400001