Kaya, F. S.2025-05-102025-05-1020230022-36971879-255310.1016/j.jpcs.2023.1116562-s2.0-85171386630https://doi.org/10.1016/j.jpcs.2023.111656https://hdl.handle.net/20.500.14720/15476Based on the light absorption property of chlorophylls, chlorophyll-a molecules, the most abundant molecules of chlorophylls, were coated on the interfacial layer for a fabricated Ni/chlorophyll-a/n-GaP device. Cur-rent-voltage (I-V) measurements were assessed for different temperatures and levels of light intensity. The characteristic parameters of the device were calculated using different methods based on I-V measurements taken at room temperature. The Ni/chlorophyll-a/n-GaP device was subjected to I-V analysis for a temperature range of 80-300 K. The barrier height values increased with increasing temperature whereas ideality factor values decreased. The I-V characteristics of the device were examined under various light intensities at 300 K and the photovoltaic effects of the device were analyzed. The photocurrent value increased from 2.58 x 10-7 at 30 mW cm-2 to 5.46 x 10-7 at 100 mW cm-2, and the sensitivity value increased from 9.72 at 30 mW cm-2 to 18.83 at mW & sdot;cm- 2, almost doubling. The results indicate that a chlorophyll-a layer has potential as a novel material for optoelectronic applications.eninfo:eu-repo/semantics/closedAccessChlorophyll-ADc SputterPhotocurrentSensitivityArticle183Q2Q1WOS:001149878500001