Korkut, Abdulkadir2025-05-102025-05-1020210218-625X1793-666710.1142/S0218625X215012502-s2.0-85119519334https://doi.org/10.1142/S0218625X21501250https://hdl.handle.net/20.500.14720/8460Korkut, Abdulkadir/0000-0003-0100-4057In this study, a set of the interface state density (ISD) formulae was derived from the Schottky effect. In contrast to the conventional approximation, a new approximation for the ISD formulae gives very unusual values in the case of forward bias or reverse bias. The former ISD formula contains the oxide thickness in the metal-semiconductor interface region, whereas the new approximation formulae do not contain the oxide thickness. They depend on the applied voltage and built-in potential in the case of both bias. Besides, lowering barrier height is called the Schottky effect. A couple of the new ISD formulae can be proportioned to each other. The ratio is a new coefficient. Moreover, the coefficient is inversely proportional with the a cceptor concentration and third power of zero-voltage depletion length. Moreover, that fraction is inversely proportional to the acceptor concentration and cubic power to depletion length.eninfo:eu-repo/semantics/closedAccessInterface State DensitySchottky EffectLowering The Barrier HeightDifferential Depletion LengthArticle2812Q4Q4WOS:000722079700002