Determination of the Density Distribution of Interface States From High- and Low-Frequency Capacitance Characteristics of the Tin/Organic Pyronine-b/P-type Silicon Structure

Çakar, MTemirci, CTürüt, A2025-05-102025-05-1020021439-42351439-764110.1002/1439-7641(20020816)3:8<7012-s2.0-0037119306https://doi.org/10.1002/1439-7641(20020816)3:8<701https://hdl.handle.net/20.500.14720/8550The interface state energy distribution curve of the Sn/ pyronine-B/p-Si Schottky diode has been obtained from its forward-bias C-HF and C-IF characteristics (see picture). The interface state density value rises exponentially with bias from the midgap towards the top of the valence band. The interface states and interfacial layer at the organic semiconductor/ inorganic semiconductor structures play an important role in the determination of the Schottky barrier height.eninfo:eu-repo/semantics/closedAccessCapacitance SpectroscopyDiodesInterfacesMaterial ScienceSemiconductorsDetermination of the Density Distribution of Interface States From High- and Low-Frequency Capacitance Characteristics of the Tin/Organic Pyronine-b/P-type Silicon StructureArticle38Q2Q2701+12503152WOS:000177669100010