Temirci, CÇakar, M2025-05-102025-05-1020040921-45261873-213510.1016/j.physb.2004.01.1492-s2.0-1942421155https://doi.org/10.1016/j.physb.2004.01.149https://hdl.handle.net/20.500.14720/14686The organic compound rhodamine 101 (Rh 101) was evaporated on the surface of an inorganic semiconductor p-type Si substrate. The current-voltage (I - V) and capacitance-voltage (C - V) measurements of the samples were carried out at room temperature and in the dark. From the I - V characteristics it was seen that the Cu/Rh 101/p-Si contacts show a rectifying behavior. An ideality factor value of 1.54 and a barrier height value of 0.78eV for the Cu/Rh 101/p-Si contact were determined from the forward bias I - V characteristics. A barrier height value of 0.97 eV was obtained from the capacitance voltage (C - V) characteristics. It has been seen that the values of the barrier height are significantly larger than those of conventional Schottky diodes. (C) 2004 Elsevier B.V. All rights reserved.eninfo:eu-repo/semantics/closedAccessOrganic CompoundRhodamine 101Schottky BarrierDiodesRectifying BehaviorArticle3481-4N/AQ2454458WOS:000221225400061