Gulebaglan, Sinem E.Dogan, Emel K.Aycibin, MuratSecuk, Mehmet N.Erdinc, BahattinAkkus, Harun2025-05-102025-05-1020131895-10821644-360810.2478/s11534-013-0314-12-s2.0-84890868672https://doi.org/10.2478/s11534-013-0314-1https://hdl.handle.net/20.500.14720/10584Aycibin, Murat/0000-0002-2634-3082Using the first-principles band-structure method, we have calculated the structural and electronic properties of zincblende TlAs, TlP, GaAs and GaP compounds and their new semiconductor Tl (x) Ga1-x As (y) P1-y quaternary alloys. Structural properties of these semiconductors are obtained with the Perdew and Wang local-density approximation. The lattice constants of Tl (x) Ga1-x As, Tl (x) Ga1-x P ternary and Tl (x) Ga1-x As (y) P1-y quaternary alloys were composed by Vegard's law. Our investigation on the effect of the doping (Thallium and Arsenic) on lattice constants and band gap shows a non-linear dependence for Tl (x) Ga1-x As (y) P1-y quaternary alloys. The band gap of Tl (x) Ga1-x As (y) P1-y , E (g) (x, y) concerned by the compositions x and y. To our awareness, there is no theoretical survey on Tl (x) Ga1-x As (y) P1-y quaternary alloys and needs experimental verification.eninfo:eu-repo/semantics/openAccessDensity Functional TheoryElectronic Structure Of Disordered SolidsElectron Density Of States And Band Structure Of Crystalline SolidsArticle1112N/AN/A16801685WOS:000328838400008