Karatas, STemirci, CÇakar, MTürüt, A2025-05-102025-05-1020060169-43321873-558410.1016/j.apsusc.2005.03.2222-s2.0-30144433936https://doi.org/10.1016/j.apsusc.2005.03.222https://hdl.handle.net/20.500.14720/12246The current-voltage (I-V) characteristics of Al/Rhodamine-101/p-Si/Al contacts have been measured at temperatures ranging from 280 to 400 K at 20 K intervals. A barrier height (BH) value of 0.817 eV for the Al/Rh101/p-Si/Al contact was obtained at the room temperature that is significantly larger than the value of 0.58 eV of the conventional Al/p-Si Schottky diode. While the barrier height Phi(b0) decreases the ideality factors (n) become larger with lowering temperature. The high values of n depending on the sample temperature may be ascribed to decrease of the exponentially increase rate in current due to space-charge injection into Rh101 thin film at higher voltage. Therefore, at all temperatures, it has been seen that the I-V characteristics show three different regions, the ohmic behavior at low voltages, and the space charge limited current with an exponential distribution of traps at high voltages. (c) 2005 Elsevier B.V. All rights reserved.eninfo:eu-repo/semantics/closedAccessOrganic Semiconductor/Inorganic Semiconductor ContactsHeterojunctionSchottky ContactsInhomogeneous Barrier HeightRectificationArticle2526Q1Q122092216WOS:000234964500016