Liqiong, PanHanif, Muhammad FarhanMahmood, HasanSiddiqui, Muhammad KamranManzoor, ShaziaCancan, Murat2025-05-102025-05-1020241040-66381563-533310.1080/10406638.2023.21749912-s2.0-85148055699https://doi.org/10.1080/10406638.2023.2174991https://hdl.handle.net/20.500.14720/10519Shazia Manzoor/0000-0001-9867-7148; Siddiqui, Muhammad Kamran/0000-0002-2607-4847; Hanif, Muhammad Farhan/0000-0002-2439-3967Several graph features have been used to distinguish the construction of entropy-based measurements from the structure of chemical graphs and complicated networks. The graph entropy metric has piqued the interest of scientists due to its possible applicability in a variety of domains. In this paper, we look at the chemical graph of silicon-carbon SiC3-I and the crystallographic structure of silicon-carbon SiC3-II. This two-dimensional structure has the potential to revolutionize optoelectronic and electrical technologies as a direct wide band gap semiconducting material. More intriguingly, the semiconducting SiC3 sheet has a significant visible-light adsorption ability. SiC3 nanosheets have a wide range of electrical characteristics, making them ideal for nano-electronics and photo-voltaic. This advantageous molecular structure, silicon carbon, is examined. More preciously in this paper, we have computed the entropy measures for SiC3-I and SiC3-II based on the topologies indices. Some comparison work is offered in addition to the analytical analysis of the entropy measure of silicon-carbon. Bases on these numerical tables and corresponding graphs we conclude that as entropy measures are the better predicator than the topological indices of physio-chemical properties.eninfo:eu-repo/semantics/closedAccessEntropyDegree Grounded Topological IndicesDegree Based EntropySilicon CarbidesArticle441Q2Q3375402WOS:000931937100001