Hasanov, E.R.Panahov, A.Z.Demirel, A.I.2025-05-102025-05-1020131314-760910.12988/astp.2013.391042-s2.0-84887183088https://doi.org/10.12988/astp.2013.39104https://hdl.handle.net/20.500.14720/4796The aim of this study is investigation of some properties of n-type doped semiconductors. Compound semiconductors having minimum points more than one, radiate high frequency energies in electric and magnetic fields at the certain values of them. Depending of the electric and magnetic field values, high frequency energy radiation states have been studied theoretically in this work. © 2013 Eladar Rasuloglu Hasanov et al.eninfo:eu-repo/semantics/closedAccessArticle721N/AN/A10351042