Nigar, N.Alam, S.M.Rasheed, M.W.Farahani, M.R.Alaeiyan, M.Cancan, M.2025-05-102025-05-1020240315-368110.61091/um119-042-s2.0-85190989852https://doi.org/10.61091/um119-04https://hdl.handle.net/20.500.14720/3441In the realm of graph theory, recent developments have introduced novel concepts, notably the νε-degree and εν-degree, offering expedited computations compared to traditional degree-based topological indices (TIs). These TIs serve as indispensable molecular descriptors for assessing chemical compound characteristics. This manuscript aims to meticulously compute a spectrum of TIs for silicon carbide SiC4-I[r, s], with a specific focus on the εν-degree Zagreb index, the νε-degree Geometric-Arithmetic index, the εν-degree Randić index, the νε-degree Atom-bond connectivity index, the νε-degree Harmonic index, and the νε-degree Sum connectivity index. This study contributes to the ongoing advancement of graph theory applications in chemical compound analysis, elucidating the nuanced structural properties inherent in silicon carbide molecules. © 2024 Utilitas Mathematica Publishing Inc.. All rights reserved.eninfo:eu-repo/semantics/openAccessEv-DegreeGraphsSilicon CarbideTopological IndicesVe-DegreeArticle119N/AQ42535