Browsing by Author "Dere, A."

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Illumination Impact on the Electrical Characteristics of Au/Sunset Yellow/N-si Hybrid Schottky Diode
(Springer, 2020) Imer, A. G.; Kaya, E.; Dere, A.; Al-Sehemi, A. G.; Al-Ghamdi, A. A.; Karabulut, A.; Yakuphanoglu, F.
In this study, semiconductor device applications of organic material sunset yellow (SY) (C16H10N2Na2O7S2) has been investigated. The SY thin film was grown onn-Si via spin coating method and theAu/SY/n-Si/Auheterojunction was fabricated. The basic diode parameters of device were determined by the current-voltage (I-V) and capacitance-voltage (C-V) measurements at the room temperature. The values of the ideality factory (n) and barrier height (phi(b)) were evaluated as 1.15 and 0.70 eV, respectively; and series resistance (R-s) of device was found using Norde functions. The values of built in potential, donor concentration, Fermi energy level and barrier height were also estimated from the linearC(-2)-Vcurves with reverse bias room temperature and difference frequency. Furthermore,I-Vmeasurements were applied under different illuminations; some photoelectrical parameters of device were evaluated to understand the photo response properties of the device. Consequently, the results confirmed that the barrier height can be modified by interfacial SY layer, and the device can be used in optoelectronic applications such as optical sensor or photodiode.
Interface Controlling Study of Silicon Based Schottky Diode by Organic Layer
(Springer, 2019) Imer, Arife Gencer; Korkut, A.; Farooq, W. A.; Dere, A.; Atif, M.; Hanif, Atif; Karabulut, Abdulkerim
The organic layer-on- insulator-semiconductor structures have attracted most attention owing to their great significance on technological applications. The interface of silicon based metal/semiconductor diode was improved using an organic layer. In this study, Sn/p-Si MS contact and Sn/C14H15N3/p-Si MIS heterojunction were fabricated via spin coating method. The electrical parameters of both devices have been investigated, and compared using the current-voltage (I-V) and capacitance-voltage (C-V) data at room temperature. The ideality factor of diodes with and without organic interfacial layer was calculated as 1.33 and 1.28, respectively. The values of barrier height were estimated as 0.69 and 0.81 eV for the MS and MIS type structure, respectively. Additionally, the values of series resistances for both diodes were determined as 1.27 and 1.19 k omega from Norde functions, respectively. The barrier height values were also examined using the reverse bias C-2-V characteristics for both diodes, and compared with results obtained from I to V data. The experimental results confirmed that the barrier height of Sn/C14H15N3/p-Si MIS structure is considerably higher than that of traditional Sn/p-Si MS diode. The performance and quality of these type devices could be improved and controlled by inserting the organic interfacial layer between the metal and semiconductor.
Photoresponsivity and Photodetectivity Properties of Copper Complex-Based Photodiode
(Elsevier, 2020) Dayan, Osman; Imer, Arife Gencer; Al-Sehemi, Abdullah G.; Ozdemir, Namik; Dere, A.; Serbetci, Z.; Yakuphanoglu, F.
Spin coated Cu(II) complex thin layer onto p-Si substrate was used in photodiode fabrication. The structural properties of novel synthesized Cu(II) complex were investigated using different techniques. The single crystal X-ray diffraction (sc-XRD) technique confirms the Cu(II) complex containing 2-mesityl1H-benzo[d]imidazole ligands and two chloride ligands have a highly distorted cis-square-planar geometry. The thermogravimetric analysis (TGA) shows that the Cu(II) complex is stable up to 248 degrees C. Also, the current-voltage measurements were performed to investigate the characteristic of photodiode based on copper complex in darkness and under solar simulator. The fundamental electrical parameters of fabricated diode were obtained using Thermionic theory and modified Norde function. The manufactured device exhibits a good response to light with the defined rise and fall time of 351 ms and 622 ms under 100 mWcm(-2) solar illumination, respectively. Furthermore, frequency dependent capacitance and conductance measurements were performed in dark and under illumination. The obtained results suggest that prepared photodiode based on Cu(II) complex could be used for organic light detection in different optoelectronic applications as photodetector, photocapacitor, and photoconductor. (C) 2019 Elsevier B.V. All rights reserved.