Browsing by Author "Imer, A. Gencer"

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Controlling of the Photosensing Properties of Al/Dmy Heterojunctions by the Interface Layer Thickness
(Elsevier Science Sa, 2016) Imer, A. Gencer; Karaduman, O.; Yakuphanoglu, F.
Organic-inorganic heterojunction was fabricated by inserting an interlayer having with three different thicknesses on the p-Si substrate. The current voltage (I-V) data of different samples were measured both under the dark and solar simulator at 300 K. The photosensing properties of devices were analyzed as a function of incident light intensity via I-V data by considering the influence of different light intensity on the generated electron-hole pairs. The transient photocurrent measurement confirmed that the photocurrent is sensitive to the illumination intensities. The obtained results confirmed that photo sensing nature and responsivity of heterojunctions enhance with the illuminations. The electrical characteristic of different heterojunctions was also obtained from voltage dependent capacitance (C-V), conductance (G-V) data as a function of frequencies. The excess capacitance could not be observed at highly enough frequencies because of that interface states charge cannot follow ac signal. The density of interface states (D-it) was evaluated by Hill-Coleman method and changes in the range from similar to 1.05 x 10(12) to 9.69 x 10(10) eV(-1) cm(-2) with the increasing frequency. It is declared that, photosensing property of diode can be controlled by various thickness of the interface layer. (C) 2016 Elsevier B.V. All rights reserved.
Electrical and Photoelectrical Characteristic Investigation of a New Generation Photodiode Based on Bromothymol Blue Dye
(Iop Publishing Ltd, 2016) Imer, A. Gencer; Tombak, A.; Korkut, A.
Bromothymol blue (BTB) with the molecular formula of C27H28Br2O5S was grown onto p-Si substrate to fabricate heterojunction by spin coating technique. The current voltage (I-V) measurements of diode were carried out in dark and under different illumination intensity at room temperature. The photoelectrical properties of heterojunction based on BTB were investigated using the illumination intensity dependent I-V data. The results showed that photo current of diode increases with the increase in light intensity. Also, the electrical parameters of device were determined via I-V, and capacitance- voltage (C-V), conductance-voltage (G-V) measurements at different frequencies. It is observed that the excess capacitance is created at low frequencies due to the contribution of interface states charge which can follow the alternative current signal to capacitance. It is stated that, both the electrical & photoelectrical parameters of diode can be changed, and also the performance of the device could be affected by the organic thin film interlayer.
Electrical Characteristics of Organic/Inorganic Pt(Ii) Complex/P-si Semiconductor Contacts
(Elsevier Sci Ltd, 2014) Imer, A. Gencer; Temirci, C.; Gulcan, M.; Sonmez, M.
We produced Pt(II)) complexes using the bidentate ligand N-aminopyrimidine-2-thione (APTH). The optical transmission of thin Pt-APTH films was measured. The optical bandgap of the material was 2.58 eV. With the expectation that it might have semiconductor properties and that the Pt-APTH complex might exhibit rectifier behavior when brought into appropriate contact with a semiconductor, we fabricated Pt-APTH/p-Si contacts by direct addition of a solution of Pt-APTH to the front side of p-Si wafers. Forward bias current-voltage measurements revealed satisfactory rectifying behavior for the Pt-APTH/p-Si contacts, with a mean rectification ratio of 4.40 x 10(2) and a mean barrier height of 0.765 eV. Cheung and Norde functions were used to obtain and verify some electrical characteristics of the contacts. The results obtained from both methods are compared and discussed. (C) 2014 Elsevier Ltd. All rights reserved.