Browsing by Author "Korkut, A."

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Differential Depletion Capacitance Approximation Analysis Under Dc Voltage for Air-Exposed Cu/N-si Schottky Diodes
(World Scientific Publ Co Pte Ltd, 2018) Korkut, A.
It is well known that the semiconductor surface is easily oxidized by air-media in time. This work studieds the characterization of Schottky diodes and changes in depletion capacitance, which is caused by air exposure of a group of Cu/n-Si/Al Schottky diodes. First, data for current-voltage and capacitance-voltage were a Ren, and then ideality factor, barrier height, built-in potential (V-bi), donor concentration and Fermi level, interfacial oxide thickness, interface state density were calculated. It is seen that depletion capacitance was calculate; whereafter built-in potential played an important role in Schottky diodes characteristic. Built-in potential directly affects the characteristic of Schottky diodes and a turning point occurs. In case of forward and reverse bias, depletion capacitance versus voltage graphics are matched, but in an opposite direction. In case of forward bias, differential depletion capacitance begins from minus values, it is raised to first V-bi, then reduced to second V-bi under the minus condition. And it sharply gones up to positive apex, then sharply falls down to near zero, but it takes positive values depending on DC voltage. In case of reverse bias, differential depletion capacitance takes to small positive values. In other respects, we see that depletion characteristics change considerably under DC voltage.
Effect of Quantizing Magnetic Field on Cyclotron Energy and Cyclotron Effective Mass in Size Quantized Films With Non-Parabolic Energy Band
(Iop Publishing Ltd, 2007) Guliyev, B. I.; Eminbeyli, R. F.; Korkut, A.
The Fermi energy, cyclotron energy and cyclotron effective mass of degenerate election gas in a size-quantized semiconductor thin film with non-parabolic energy bands are studied. The influences of quantizing magnetic held on these quantities in two-band approximation of the Kane model are investigated. It is shown that the Fermi energy oscillates in a magnetic held. The period and positions of these oscillations are found as a function of Elm thickness and concentration of electrons. Cyclotron energy and cyclotron effective mass are investigated as a function of Elm thickness in detail. The results obtained here are compared with experimental data on GaAs quantum wells.
Electrical and Photoelectrical Characteristic Investigation of a New Generation Photodiode Based on Bromothymol Blue Dye
(Iop Publishing Ltd, 2016) Imer, A. Gencer; Tombak, A.; Korkut, A.
Bromothymol blue (BTB) with the molecular formula of C27H28Br2O5S was grown onto p-Si substrate to fabricate heterojunction by spin coating technique. The current voltage (I-V) measurements of diode were carried out in dark and under different illumination intensity at room temperature. The photoelectrical properties of heterojunction based on BTB were investigated using the illumination intensity dependent I-V data. The results showed that photo current of diode increases with the increase in light intensity. Also, the electrical parameters of device were determined via I-V, and capacitance- voltage (C-V), conductance-voltage (G-V) measurements at different frequencies. It is observed that the excess capacitance is created at low frequencies due to the contribution of interface states charge which can follow the alternative current signal to capacitance. It is stated that, both the electrical & photoelectrical parameters of diode can be changed, and also the performance of the device could be affected by the organic thin film interlayer.
Interface Controlling Study of Silicon Based Schottky Diode by Organic Layer
(Springer, 2019) Imer, Arife Gencer; Korkut, A.; Farooq, W. A.; Dere, A.; Atif, M.; Hanif, Atif; Karabulut, Abdulkerim
The organic layer-on- insulator-semiconductor structures have attracted most attention owing to their great significance on technological applications. The interface of silicon based metal/semiconductor diode was improved using an organic layer. In this study, Sn/p-Si MS contact and Sn/C14H15N3/p-Si MIS heterojunction were fabricated via spin coating method. The electrical parameters of both devices have been investigated, and compared using the current-voltage (I-V) and capacitance-voltage (C-V) data at room temperature. The ideality factor of diodes with and without organic interfacial layer was calculated as 1.33 and 1.28, respectively. The values of barrier height were estimated as 0.69 and 0.81 eV for the MS and MIS type structure, respectively. Additionally, the values of series resistances for both diodes were determined as 1.27 and 1.19 k omega from Norde functions, respectively. The barrier height values were also examined using the reverse bias C-2-V characteristics for both diodes, and compared with results obtained from I to V data. The experimental results confirmed that the barrier height of Sn/C14H15N3/p-Si MIS structure is considerably higher than that of traditional Sn/p-Si MS diode. The performance and quality of these type devices could be improved and controlled by inserting the organic interfacial layer between the metal and semiconductor.
New Serial Resistance Equations: Derivated From Cheungs' Functions for the Forward and Reverse Bias I
(Elsevier Science Bv, 2018) Korkut, A.
In this study, a group of new series resistance has been derived using Cheung functions. In contrast to the traditional approximation, new serial resistance formulae result in very exceptional value from the conventional serial resistance values for both cases, the forward bias and the reverse bias. These new serial resistance formulae exhibit a stable behavior. Besides, the relation between R-Ns1-I, R-Ns2-I, R-Ns1-V-bi and R-Ns2-V-bi could be shown easily. It is enough to take the curent matching of the integer values of the built-in potential.