Browsing by Author "Mahmood, Othman Haji"

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The Effect of Tin Doping Level on the Physical Properties and Photocatalytic Degradation of Cadmium Oxide Nanostructured Film
(Elsevier, 2021) Imer, Arife Gencer; Mahmood, Othman Haji; Kaya, Esra; Ocak, Yusuf Selim
Pure and tin (Sn) doped CdO films were deposited onto soda-lime glass via ultrasonic spray pyrolysis (USP) method with Sn concentrations of 1, 2 and 3%. The effect of doping level on the structural, morphological and optical properties of the films was explored by using several diagnostic techniques including X-ray diffraction, atomic force microscopy, UV-Vis spectroscopy and Hall effect methods. The doping level in the CdO film affects the photocatalytic performance of the nanostructured films. It has been declared that the physical properties of the highly conducting and transparent nanostructured CdO films can be modified/controlled by tin doping for optoelectronic applications. (c) 2021 Elsevier Ltd. Selection and peer-review under responsibility of the scientific committee of the International Congress on Semiconductor Materials and Devices, ICSMD2018.
The Investigation of the Fundamental Electrical Parameters of Ag/N-si Hybrid Structure Based on Functional Organic Dye
(Elsevier, 2021) Mahmood, Othman Haji; Imer, Arife Gencer; Ugur, Ali; Korkut, Abdulkadir
The electrical parameters of Ag/n-Si contact and the hybrid structure has been investigated due to their possible usage in optoelectronic device applications. In this study, the hybrid structure was fabricated using the brilliant blue film as an organic interlayer formed via spin coating method. The electrical parameters of both devices have been determined and compared using the current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. The experimental results confirmed that the barrier height of hybrid structure is considerably affected; and its performance and quality can be modified/controlled by the functional interfacial organic layer. (c) 2021 Elsevier Ltd. Selection and peer-review under responsibility of the scientific committee of the International Congress on Semiconductor Materials and Devices, ICSMD2018.
The Photodetection Characteristics of a Brilliant Blue-Fcf Implemented Device for Organic-Based Optoelectronic Applications
(Pergamon-elsevier Science Ltd, 2024) Mahmood, Othman Haji; Ugur, Ali; Imer, Arife Gencer
The optical properties of sol-gel-based brilliant blue-FCF (BB-FCF) thin film are analyzed for photodetection applications. The effect of the presence of the BB-FCF interface on the microelectronic characteristics of the designated Cu/BB-FCF/n-Si device is elucidated by comparing to its reference Cu/n-Si device. The systematic investigation of photodetection properties of the integrated device is performed between the 20-100 mW/cm(2) illumination intensities. First, the optical features of spin-coated BB-FCF thin film are investigated by UV-Vis measurements, and the absorbance of the film is elucidated by the efficient optical absorption in the wavelength of similar to 350-700 nm with the calculated optical indirect band gap of 1.72 eV. Next, the frequency-dependent capacitive behavior, charge transport mechanism, and the electronic parameters of both the rectifying Cu/n-Si and the implemented Cu/BB-FCF/n-Si devices like the ideality factor, the barrier height, and series resistance are estimated using the Thermionic emission and Norde's function methods. Subsequently, the photodetection properties of the engineered device with a BB-FCF functional dye interface are studied under a solar simulator with different power intensities. The effect of the illumination intensity and applied reverse bias voltage on the figures of merit, including photoresponsivity, photodetectivity, response speed, and linear dynamic property, are analyzed under an illumination of 20-100 mW/cm(2). The designated device with a BB-FCF interface has achieved significant and fast, stable on/off switching sensitivities, with 524 ms and 629 ms rising and falling times, respectively. Therefore, the prepared BB-FCF-based device has good and stable photoresponse performance, and the Cu/BB-FCF/n-Si architecture device may be a strong candidate for photonic and optoelectronic device applications, particularly in rapidly developing organic material-based device technology.