Browsing by Author "Murtaza, G."

Now showing 1 - 2 of 2

Ab Initio Investigation of the Structural, Electronic and Optical Properties of Cubic Gaas1-X P X Ternary Alloys Under Hydrostatic Pressure
(Springer, 2015) Moussa, R.; Abdiche, A.; Abbar, B.; Guemou, M.; Riane, R.; Murtaza, G.; Soyalp, F.
The structural, electronic and optical properties of the GaAs1-x P (x) ternary alloys together with their binary GaP and GaAs compounds were investigated in the zinc-blende (ZB) phase using the density functional theory. The lattice constant of the GaAs compound decreases while its bulk modulus increases when the doping concentration of the P dopant is increased. In addition, both parameters (lattice constant and bulk modulus) show small deviations from the linear concentration dependence. The energy band gap of the GaAs compound is of the direct nature, which increases with the increase in the P dopant concentration, whereas at higher P dopant concentration, the band gap shifts from direct to indirect character. On the other hand, the hydrostatic pressure has a significant effect on the band structure of the investigated compounds where the binary GaAs compound changes from a direct band gap semiconductor to an indirect band gap semiconductor at P a parts per thousand yen 5 GPa. Furthermore, the pressure-dependence of the optical properties of the GaAs, GaP and GaAs0.75P0.25 alloy were also investigated, where the calculated zero frequency refractive index and the dielectric function are also compared with the experimental results as well as with different empirical models.
Optoelectronic and Thermoelectric Properties of Zintl Yli3a2 (A = Sb, Bi) Compounds Through Modified Becke-Johnson Potential
(Iop Publishing Ltd, 2016) Seddik, T.; Ugur, G.; Khenata, R.; Ugur, S.; Soyalp, F.; Murtaza, G.; Bin Omran, S.
In the present work, we investigate the structural, optoelectronic and thermoelectric properties of the YLi3X2 (X = Sb, Bi) compounds using the full potential augmented plane wave plus local orbital (FP-APW + lo) method. The exchange-correlation potential is treated with the generalized gradient approximation/local density approximation (GGA/LDA) and with the modified Becke-Johnson potential (TB-mBJ) in order to improve the electronic band structure calculations. In addition, the estimated ground state properties such as the lattice constants, external parameters, and bulk moduli agree well with the available experimental data. Our band structure calculations with GGA and LDA predict that both compounds have semimetallic behaviors. However, the band structure calculations with the GGA/TB-mBJ approximation indicate that the ground state of the YLi3Sb2 compound is semiconducting and has an estimated indirect band gap (Gamma-L) of about 0.036 eV while the ground state of YLi3Bi2 compound is semimetallic. Conversely the LDA/TB-mBJ calculations indicate that both compounds exhibit semiconducting characters and have an indirect band gap (Gamma-L) of about 0.15 eV and 0.081 eV for YLi3Sb and YLi3Bi2 respectively. Additionally, the optical properties reveal strong responses of the herein materials in the energy range between the IR and extreme UV regions. Thermoelectric properties such as thermal conductivity, electrical conductivity, Seebeck coefficient, and thermo power factors are also calculated.