Browsing by Author "Yildirim, Nezir"

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Characterization of Cuo/N-si Heterojunction Solar Cells Produced by Thermal Evaporation
(Sciendo, 2018) Ozmentes, Resit; Temirci, Cabir; Ozkartal, Abdullah; Ejderha, Kadir; Yildirim, Nezir
Copper(II) oxide (CuO) in powder form was evaporated thermally on the front surface of an n-Si (1 0 0) single crystal using a vacuum coating unit. Structural investigation of the deposited CuO film was made using X- ray difraction (XRD) and energy dispersive X- ray analysis (EDX) techniques. It was determined from the obtained results that the copper oxide films exhibited single-phase CuO properties in a monoclinic crystal structure. Transmittance measurement of the CuO film was performed by a UV-Vis spectrophotometer. Band gap energy of the film was determined as 1.74 eV under indirect band gap assumption. Current-voltage (I-V) measurements of the CuO/n-Si heterojunctions were performed under illumination and in the dark to reveal the photovoltaic and electrical properties of the produced samples. From the I-V measurements, it was revealed that the CuO/n-Si heterojunctions produced by thermal evaporation exibit excellent rectifying properties in dark and photovoltaic properties under illumination. Conversion efficiencies of the CuO/n-Si solar cells are comparable to those of CuO/n-Si produced by other methods described in the literature.
Current-Voltage and Capacitance-Voltage Characteristics of Sn/Rhodamine-101 and Sn/Rhodamine-101 Schottky Barrier Diodes
(Amer inst Physics, 2006) Cakar, Muzaffer; Yildirim, Nezir; Karatas, Sukru; Temirci, Cabir; Turut, Abdulmecit
The nonpolymeric organic compound rhodamine-101 (Rh101) film on a n-type Si or p-type Si substrate has been formed by means of the evaporation process and the Sn/rhodamine-101/Si contacts have been fabricated. The Sn/Rh101/n-Si and Sn/Rh101/p-Si contacts have rectifying contact behavior with the barrier height (BH) values of 0.714 and 0.827 eV, and with ideality factor values of 2.720 and 2.783 obtained from their forward bias current-voltage (I-V) characteristics at room temperature, respectively. It has been seen that the BH value of 0.827 eV obtained for the Sn/Rh101/p-Si contact is significantly larger than BH values of the conventional Sn/p-Si Schottky diodes and metal/interfacial layer/Si contacts. Thus, modification of the interfacial potential barrier for metal/Si diodes has been achieved using a thin interlayer of the Rh101 organic semiconductor; this has been ascribed to the fact that the Rh101 interlayer increases the effective barrier height by influencing the space charge region of Si. (c) 2006 American Institute of Physics.