Browsing by Author "Fayz-Al-Asad, Md"
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Article An Analytical Technique for Solving New Computational Solutions of the Modified Zakharov-Kuznetsov Equation Arising in Electrical Engineering(Shahid Chamran Univ Ahvaz, Iran, 2021) Islam, Shariful; Alam, Md Nur; Fayz-Al-Asad, Md; Tunc, CemilThe modified (G'/G)-expansion method is an efficient method that has appeared in recent times for solving new computational solutions of nonlinear partial differential equations (NPDEs) arising in electrical engineering. This research has applied this process to seek novel computational results of the developed Zakharov-Kuznetsov (ZK) equation in electrical engineering. With 3D and contour graphical illustration, mathematical results explicitly exhibit the proposed algorithm's complete honesty and high performance.Article Impact of Electronic States of Conical Shape of Indium Arsenide/Gallium Arsenide Semiconductor Quantum Dots(Prairie View A & M Univ, dept Mathematics, 2021) Fayz-Al-Asad, Md; Al-Rumman, Md; Alam, Md Nur; Parvin, Salma; Tunc, CemilSemiconductor quantum dots (QDs) have unique atom-like properties. In this work, the electronic states of InAs quantum dot grown on a GaAs substrate has been studied. The analytical expressions of electron wave function for cone-like quantum dot on the semiconductor surface has been obtained and the governing eigen value equation has been solved, thereby obtaining the dependence of ground state energy on radius and height of the cone-shaped nano-dots. In addition, the energy of eigenvalues is computed for various length and thickness of the wetting layer (WL). We discovered that the eigen functions and energies are nearly associated with the GaAs potential.