Browsing by Author "Imer, Arife Gencer"
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Article Dye Sensitized Solar Cell-Based Optoelectronic Device Using Novel [Ru(l1)(l2)(ncs)2] Complex(Elsevier, 2021) Dayan, Osman; Imer, Arife Gencer; Tercan, Melek; Dere, Aysegul; Al-Sehemi, Abdullah G.; Al-Ghamdi, Ahmed A.; Yakuphanoglu, FahrettinA dye sensitized solar cell-based photodiode was prepared using novel [Ru(L1)(L2)(NCS)(2)] complex for solar energy and optoelectronic applications. The new heteroleptic ruthenium(II) complex [Ru(L1)(L2)(NCS)(2)], was synthesized from the reaction of (pyridyl)benzimidazole ligands. The possible usage of [Ru(L1)(L2)(NCS)(2)] complex in dye synthesized solar cell-based photodiode was investigated using electrical and capacitance characteristics. The device was irradiated under various solar light intensities. The change in photocurrent of the device confirms the photoconducting behavior of prepared device. The device exhibited both the photocapacitance and photoresponse behavior with solar illumination. The obtained optoelectrical results suggest that the studied photodiode with [Ru(L1)(L2)(NCS)(2)] complex could be used in optoelectronic device for optical switching and controlling applications. (C) 2021 Elsevier B.V. All rights reserved.Article Effect of Light Intensity and Temperature on the Current Voltage Characteristics of Al/Sy Organic-Inorganic Heterojunction(Springer, 2016) Imer, Arife Gencer; Ocak, Yusuf SelimAn organic-inorganic contact was fabricated by forming a thin film of sunset yellow dye (SY) on a p-Si wafer. The device showed a good rectification property, and the sunset yellow thin film modified the barrier height (Ub) of Al/p-Si contact by influencing the space charge region. The heterojunction had a strong response to the different illumination intensities and showed that it can be suitable for photodiode applications. The I-V measurements of the device were also applied in the temperature range of 100-500 K. It was seen that characteristic parameters of the device were strongly dependent upon temperature. While the value of Ub increased, the ideality factor (n) decreased with the increase in temperature. This variation was attributed to spatial inhomogeneity at the interface. The Norde function was used to determine the temperature-dependent series resistance and Ub values, and there was a good agreement with that of ln I-V data. The values of the Richardson constant (A*) and mean Ub were determined as 29.47 A cm(-2) K-2 by means of a modified activation energy plot, matching with a theoretical one, and 1.032 eV, respectively. Therefore, it was stated that the current voltage characteristic with the temperature can be explained by thermionic emission theory with Gaussian distribution of the Ub at the interface.Conference Object The Effect of Tin Doping Level on the Physical Properties and Photocatalytic Degradation of Cadmium Oxide Nanostructured Film(Elsevier, 2021) Imer, Arife Gencer; Mahmood, Othman Haji; Kaya, Esra; Ocak, Yusuf SelimPure and tin (Sn) doped CdO films were deposited onto soda-lime glass via ultrasonic spray pyrolysis (USP) method with Sn concentrations of 1, 2 and 3%. The effect of doping level on the structural, morphological and optical properties of the films was explored by using several diagnostic techniques including X-ray diffraction, atomic force microscopy, UV-Vis spectroscopy and Hall effect methods. The doping level in the CdO film affects the photocatalytic performance of the nanostructured films. It has been declared that the physical properties of the highly conducting and transparent nanostructured CdO films can be modified/controlled by tin doping for optoelectronic applications. (c) 2021 Elsevier Ltd. Selection and peer-review under responsibility of the scientific committee of the International Congress on Semiconductor Materials and Devices, ICSMD2018.Article Effects of the R-Go Doping on the Structural, Optical and Electrical Properties of Cdo Nanostructured Films by Ultrasonic Spray Pyrolysis(Springer, 2020) Imer, Arife Gencer; Gulcan, Mehmet; Celebi, Metin; Tombak, Ahmet; Ocak, Yusuf SelimUndoped and reduced graphene oxide (r-GO)-doped CdO films were prepared via the ultrasonic spray pyrolysis method with weight ratios of 1, 3 and 5% onto substrates. The successfully prepared films were characterized to understand the influence of r-GO dopant content on the morphological, structural, electrical and optical properties of the films by several diagnostic techniques. XRD measurement confirms that all the films were polycrystalline in the cubic phase of CdO with the preferred orientation (111). The optical band gap of the films decreases with the increase in doping amount. The r-GO@CdO nanostructured films were used as an interfacial layer to fabricate the heterojunction device and to investigate their electrical properties using current-voltage and capacitance-voltage measurements in the dark. The rectification properties of the studied devices increase with the r-GO dopant amount. The obtained results indicate that the r-GO content in the CdO films is responsible for the modification of physical properties of electronic device.Article Electrical and Photoelectrical Characterization of an Organic-Inorganic Heterojunction Based on Quinoline Yellow Dye(Elsevier Sci Ltd, 2015) Ugur, Ali; Imer, Arife Gencer; Ocak, Yusuf SelimAn organic-inorganic contact was fabricated by forming a thin film of quinoline yellow dye (QY) on a p-Si wafer and evaporating Al metal on the film. The current-voltage (I-V) and capacitance-voltage (C-V) measurements of Al/QY/p-Si heterostructure were applied in dark and room temperature to calculate the characteristic parameters of diode like ideality factor, barrier height and series resistance. Ideality factor and barrier height values were found as 1.23 and 0.87 eV from I-V data, respectively. The series resistance value of the device was determined as 1.8k Omega by using modified Norde function. The C-V measurements were carried out at different frequencies and it was seen that capacitance value decreased with increasing frequency. Interface state density distribution was calculated by means of I-V measurement. In addition the optical absorption of thin QY film on glass was measured and optical band gap of the film was found as 2.73 eV. Furthermore, I-V measurements of Al/QY/p-Si/Al were taken under illumination between 40 and 100 mW/cm(2). It was observed that reverse bias current of the device increased with light intensity. Thus, the heterojunction had a strong response to the light and it can be suitable for electrical and optoelectronic applications like a photodiode. (C) 2015 Elsevier Ltd. All rights reserved.Article Enhancement in the Photovoltaic Efficiency of Dye-Sensitized Solar Cell by Doping Tio2 With Mil-101 Mof Structure(Elsevier Sci Ltd, 2022) Ugur, Ali; Imer, Arife Gencer; Gulcan, MehmetIn this work, pure and MIL-101 doped TiO2 films on fluorine doped tinoxide (FTO) were prepared by sol-gel method for dye sensitized solar cell (DSSC) fabrication. MIL-101 metal-organic framework (MOF) structure was synthesized by hydrothermal method and it was used as dopant in TiO2 to enhance an efficiency of DSSC device for the first time. The surface morphology of pure and MIL-101 doped TiO2 films were characterized by scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDX), the crystallite size and structural properties of these films were studied by X-ray diffraction (XRD) and Fourier transform infrared (FTIR) techniques, respectively. Ultraviolet-visible spectroscopy (UV-Vis) measurement presents the change in an optical characteristic and the band gap of the film with MIL-101 incorporation owing to its high surface area. The efficiency enhancement in DSSC device with MIL-101 doping was analyzed via current-voltage (I-V) measurement under various power of solar simulator. The results confirm that power conversion efficiency (PCE) can enhance with MIL-101 doping into TiO2. The power conversion efficiency of MIL101@DSSC is 8.687% under 100 mW/cm(2) illumination power, which is 1.85 times greater than PCE of undoped DSSC (4.689%). The enhancing efficiency of MIL-101@DSSC can be associated with the energy band alignment, improvement in photoelectron trapping, and increase in dye adsorption owing to pore structure of MIL-101.Article Improved Efficiency in Dye Sensitized Solar Cell (Dssc) by Nano-Mil Impregnated Photoanode(Walter de Gruyter Gmbh, 2022) Ugur, Ali; Imer, Arife Gencer; Kaya, Esra; Karatas, Yasar; Gulcan, MehmetIn the present work, MIL-101 nanoparticles (nano-MIL-101(Cr)) metal-organic framework (MOF) structure was synthesized by hydrothermal method, and characterized via Fourier transform infrared, X-ray diffraction, and scanning electron microscopy techniques. The optoelectronic application of MOFs was investigated for the first time. For this purpose, the dye-sensitized solar cells (DSSCs) consisting of the synthesized nano-MIL-101(Cr) impregnated photoanode (PA) was fabricated, and photovoltaic, photoelectric properties of them were investigated under different illumination intensities, and the obtained results were compared with reference one. The DSSC fabricated by impregnated PA showed better photovoltaic properties than reference one. It is obtained the power conversion efficiency (PCE) of about 0.828 and fill factor (ff) of 0.656 for the fabricated DSSC based on nano-MIL-101(Cr) impregnated PA under illumination power of 100 mW/cm(2) by AM1.5 G solar simulator. For the reference DSSC, PCE, and ff is about 0.468 and 0.28, respectively. The PCE of the fabricated device based on nano-MIL-101(Cr) is similar to 77% greater than the reference one. The improvement in the efficiency is because of good electrocatalytic activity, large pores, and high surface area of nano-MIL-101(Cr). The nano-MIL-101(Cr) can be used in organo-optoelectronic device fabrication to obtain better performance.Article Influence of Annealing Process on Structural, Optical and Electronic Properties of Nano-Structured Zno Films Synthesized by Hydrothermal Technique: Supported by Dft Study(Elsevier, 2022) Majeed, Mahmood H.; Aycibin, Murat; Imer, Arife Gencer; Muhammad, Ali M.; Kareem, Mahmood M.The annealing temperature effect on the physical properties of zinc oxide (ZnO) nanorods is experimentally and theoretically investigated. Different diagnostics techniques such as XRD, UV-Vis, SEM, and Hall effect measurements were employed to analyze the influence of annealing temperature on the structural, optical, and electrical properties of ZnO nanorods films. Additionally, Density Functional Theory (DFT) was also applied to calculate ZnO's lattice parameters, energy gap, and optical properties depending on annealing temperature. Experimental results show that the variation of the optical band gap of the fabricated samples has the same behavior within the theoretical calculation. X-ray diffraction (XRD) results reveal that the pure film is crystallized in the hexagonal phase of ZnO with the miller plane (00 2).The crystallite size is affected by annealing temperature. The field emission scanning electron microscopy (FESEM) shows nanorods formation on the surface of the films. The transmittance properties of the studied films are dependent on the annealing temperature in the ZnO films from UV-Vis data, confirming the band gap's widening effect with annealing. Overall, the experimental and theoretical findings support each other.Article Influence of Substrate Temperature and Mn/Y Co-Doping Concentration on the Morphological, Structural and Optical Properties of Cuo Nanostructured Film Deposited by the Spray Pyrolysis Method(Elsevier, 2025) Hussein, Balen; Imer, Arife Gencer; Aycibin, MuratIn this work, the effect of substrate temperature (ST) during deposition and dopant amount of Mn (1,3,5, and 7 %) and Y(3 %), (Mn/Y), on the physical properties of copper oxide (CuO) the nanostructured film were analyzed using different diagnostic tools. The pure and (Mn, Y) co-doped CuO thin films were deposited by the spray pyrolysis method, which is effective and easy to apply for any substrate. Deposited pure and (Mn,Y) co-doped CuO nanostructured films were investigated by X-ray diffraction (XRD), UV-Vis spectroscopy, and Field emission scanning electron microscopy (FESEM) techniques to analyze the influence of ST and co-doping on the structural, morphological, and optical properties of prepared films. The FESEM is used to visualize nano- structures on the surface of the film. Also, it is observed that the surface morphology of CuO film changes from a spherical-like to a nanocloumnar-like structure with increasing substrate temperature. The XRD diffractograms confirm the monoclinic crystal structure of CuO, in polycrystalline nature for all deposited films. UV-Vis spectra suggest changing the optical absorbance and the band gap of the pure and Mn/Y co-doped CuO nanostructured films. In the first investigation of this study, the better substrate temperature was obtained as 400 degrees C according to results. In the second part, the effect of Y and Mn doping with different content was analyzed for the CuO film deposited at the chosen ST of 400 degrees C. There is no observable crystalline structure variation in the XRD pattern, but the size of nanostructure and dislocation density are varied with Mn/Y co-doping. FESEM micrographs confirm the impact of the co-doping concentration on the size, shape, and surface properties of CuO nano- structured film. In addition, the optical band gap increases with Mn doping up to 3 % of Mn content and it was determined as 2.69 eV for the sample 3Mn/Y@CuO nanostructured film. The obtained results suggest that the substrate temperature has an important impact on the physical properties of the spray deposited CuO nano- structured film, and the structural, optical, and surface properties of the CuO nanostructured films may be engineered by Mn/Y doping concentration.Article Interface Controlling Study of Silicon Based Schottky Diode by Organic Layer(Springer, 2019) Imer, Arife Gencer; Korkut, A.; Farooq, W. A.; Dere, A.; Atif, M.; Hanif, Atif; Karabulut, AbdulkerimThe organic layer-on- insulator-semiconductor structures have attracted most attention owing to their great significance on technological applications. The interface of silicon based metal/semiconductor diode was improved using an organic layer. In this study, Sn/p-Si MS contact and Sn/C14H15N3/p-Si MIS heterojunction were fabricated via spin coating method. The electrical parameters of both devices have been investigated, and compared using the current-voltage (I-V) and capacitance-voltage (C-V) data at room temperature. The ideality factor of diodes with and without organic interfacial layer was calculated as 1.33 and 1.28, respectively. The values of barrier height were estimated as 0.69 and 0.81 eV for the MS and MIS type structure, respectively. Additionally, the values of series resistances for both diodes were determined as 1.27 and 1.19 k omega from Norde functions, respectively. The barrier height values were also examined using the reverse bias C-2-V characteristics for both diodes, and compared with results obtained from I to V data. The experimental results confirmed that the barrier height of Sn/C14H15N3/p-Si MIS structure is considerably higher than that of traditional Sn/p-Si MS diode. The performance and quality of these type devices could be improved and controlled by inserting the organic interfacial layer between the metal and semiconductor.Article Investigation of Al Doping Concentration Effect on the Structural and Optical Properties of the Nanostructured Cdo Thin Film(Academic Press Ltd- Elsevier Science Ltd, 2016) Imer, Arife GencerNanostructured aluminium (Al) doped cadmium oxide (CdO) films with highly electrical conductivity and optical transparency have been deposited for the first time on soda-lime glass substrates preheated at 250 degrees C by ultrasonic spray coating technique. The aluminium dopant content in the CdO film was changed from 0 to 5 at%. The influencing of Al doping on the structural, morphological, electrical and optical properties of the CdO nano structured films has been investigated. Atomic force microscopy study showed the grain size of the films is an order of nanometers, and it decreases with increase in Al dopant content. All the films having cubic structure with a lattice parameter 4.69 angstrom were determined via X ray diffraction analysis. The optical band gap value of the films, obtained by optical absorption, was found to increase with Al doping. Electrical studies exhibited mobility, carrier concentration and resistivity of the film strongly dependent on the doping content. It has been evaluated that optical band gap, and grain size of the nanostructured CdO film could be modified by Al doping. (C) 2016 Elsevier Ltd. All rights reserved.Conference Object The Investigation of the Fundamental Electrical Parameters of Ag/N-si Hybrid Structure Based on Functional Organic Dye(Elsevier, 2021) Mahmood, Othman Haji; Imer, Arife Gencer; Ugur, Ali; Korkut, AbdulkadirThe electrical parameters of Ag/n-Si contact and the hybrid structure has been investigated due to their possible usage in optoelectronic device applications. In this study, the hybrid structure was fabricated using the brilliant blue film as an organic interlayer formed via spin coating method. The electrical parameters of both devices have been determined and compared using the current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. The experimental results confirmed that the barrier height of hybrid structure is considerably affected; and its performance and quality can be modified/controlled by the functional interfacial organic layer. (c) 2021 Elsevier Ltd. Selection and peer-review under responsibility of the scientific committee of the International Congress on Semiconductor Materials and Devices, ICSMD2018.Article Metal Organic Framework (mof-5) and Graphene Oxide (Go) Derived Photoanodes for an Efficient Dye-Sensitized Solar Cells(Elsevier, 2025) Kaya, Esra; Imer, Arife Gencer; Gulcan, MehmetIn this work, graphene oxide (GO) and metal organic frameworks (MOF-5) have been used as adding materials in the modification of photoanode to enhance the photovoltaic performance of dye-sensitized solar cells (DSSCs). The photoconversion efficiency (PCE) is systematically examined in DSSCs, consisting of MOF-5 or GO incorporated TiO2, GO/MOF-5 derived and pure photoanodes. The short circuit current density (JSC) becomes higher after GO incorporating, resulting in improved PCE of the device compared with pristine one, due to its fast electron transport property. After the addition with GO/MOF-5, JSC value gets close to that of pure one, due to suppression of electron transport, the photoelectron trapping at the interface. Moreover, adding with MOF-5 structure introduces better photovoltaic parameters with higher JSC and open circuit voltage (VOC) values, due to the high pore structure of MOF-5 material. Its property endues a high dye adsorption capability of MOF-5 modified photoanode, monitored by absorbance spectrum of dye-loaded one. The PCE of DSSC conducted with MOF-5 derived photoanode is 5.56 times superior to pure device, owing to improved light harvesting, and enhanced charge collection efficiency. The obtained results shed light on the important impact of derived photoanodes for DSSC applications in the future photovoltaic technologies.Article Modification in the Electronic Parameters of M/P-si Hybrid Device by Psp Functional Dye Interface With Different Contact Metals (M:ag, Cu, Pd, Sn)(Elsevier Science Sa, 2023) Omarbli, Sabiha Abdullah; Imer, Arife GencerIn this study, a functional organic dye of phenol-sulfonphthalein (PSP) was used as an interfacial layer via a spin coating method, its impact on the electronic parameters including Schottky barrier height (Ob), ideality factor (n) and series resistance (Rs) was investigated for different top metal contacts. An Al metal was employed for Ohmic contact, while Schottky contacts were formed using different metals as Ag, Cu, Pd, and Sn metals via thermal evaporation technique during the fabrication process of M/PSP/p-Si hybrid devices (M: Ag, Cu, Pd, Sn) and their references (M/p-Si). The electrical performance of all references and Ag/PSP/p-Si, Cu/PSP/p-Si, Pd/PSP/p-Si, and Sn/PSP/p-Si hybrid structures were evaluated by performing current-voltage (I-V) and capacitance -voltage (C-V) measurements at the room temperature. The obtained results confirm that barrier height of all devices with and without the PSP organic interlayer depends on metal work function. The PSP interface layer leads to increase in barrier height value of the M/PSP/p-Si devices as compared to that of reference (M/p-Si) ones. This increment value for hybrid structures with the presence of PSP layer related with the metal work function for Ag, Cu, Pd, and Sn top metal. The highest Ob value of 0.760 eV and the lowest one as 0.618 eV were obtained by TE theory for the Sn/PSP/p-Si, Ag/PSP/p-Si device, respectively. The obtained results confirmed that PSP interface material and the work function of top contact metals are strongly impact on the modifying of the electronic parameters of fabricated devices.Article The Photodetection Characteristics of a Brilliant Blue-Fcf Implemented Device for Organic-Based Optoelectronic Applications(Pergamon-elsevier Science Ltd, 2024) Mahmood, Othman Haji; Ugur, Ali; Imer, Arife GencerThe optical properties of sol-gel-based brilliant blue-FCF (BB-FCF) thin film are analyzed for photodetection applications. The effect of the presence of the BB-FCF interface on the microelectronic characteristics of the designated Cu/BB-FCF/n-Si device is elucidated by comparing to its reference Cu/n-Si device. The systematic investigation of photodetection properties of the integrated device is performed between the 20-100 mW/cm(2) illumination intensities. First, the optical features of spin-coated BB-FCF thin film are investigated by UV-Vis measurements, and the absorbance of the film is elucidated by the efficient optical absorption in the wavelength of similar to 350-700 nm with the calculated optical indirect band gap of 1.72 eV. Next, the frequency-dependent capacitive behavior, charge transport mechanism, and the electronic parameters of both the rectifying Cu/n-Si and the implemented Cu/BB-FCF/n-Si devices like the ideality factor, the barrier height, and series resistance are estimated using the Thermionic emission and Norde's function methods. Subsequently, the photodetection properties of the engineered device with a BB-FCF functional dye interface are studied under a solar simulator with different power intensities. The effect of the illumination intensity and applied reverse bias voltage on the figures of merit, including photoresponsivity, photodetectivity, response speed, and linear dynamic property, are analyzed under an illumination of 20-100 mW/cm(2). The designated device with a BB-FCF interface has achieved significant and fast, stable on/off switching sensitivities, with 524 ms and 629 ms rising and falling times, respectively. Therefore, the prepared BB-FCF-based device has good and stable photoresponse performance, and the Cu/BB-FCF/n-Si architecture device may be a strong candidate for photonic and optoelectronic device applications, particularly in rapidly developing organic material-based device technology.Article The Photodetection Properties of a Ruthenium Electro-Optic Device for Organic Material-Based Device Industry(Elsevier, 2023) Imer, Arife Gencer; Dere, Aysegul; Kaya, Esra; Al-Sehemi, Abdullah G.; Dayan, Osman; Al-Ghamdi, Ahmed A.; Yakuphanoglu, F.The electrical properties and effect of illumination on the photodetection properties were investigated for the fabricated device with Ru(II)-pydim complex interface layer. The Ru(II)-pydim interface was deposited by spin coating technique on a p-silicon substrate. The electrical and optoelectrical parameters of photodiode were analyzed via the current-voltage (I-V), capacitance/conductance-voltage (C/G-V) measurements under dark and different illumination power. The fabricated device has good electrical parameters such as the rectification ratio of 2.726 x 104, the ideality factor of 1.328, and barrier height of 0.805 eV under the dark condition. The current values of the device with Ru(II)-pydim interface at reverse bias were strongly dependent on the illumination intensities, confirming its photoconduction behavior. The I-V measurements under different solar illuminations present that the electro-optic device with Ru(II)-pydim complex as an interface has good photodiode parameters with the responsivity of 131 mA/W, and the detectivity of 1.63 x 1011 Jones at 100 mW/cm2. The photo transient measurements demonstrate that the Ru(II)-pydim complex based photodiode presents the desired photo-switching property. Therefore, the prepared Ru(II)-pydim based device can be used for electro-optic and photonic applications, particularly in the rapidly developing organic material-based device industry.Article Photoresponsivity and Photodetectivity Properties of Copper Complex-Based Photodiode(Elsevier, 2020) Dayan, Osman; Imer, Arife Gencer; Al-Sehemi, Abdullah G.; Ozdemir, Namik; Dere, A.; Serbetci, Z.; Yakuphanoglu, F.Spin coated Cu(II) complex thin layer onto p-Si substrate was used in photodiode fabrication. The structural properties of novel synthesized Cu(II) complex were investigated using different techniques. The single crystal X-ray diffraction (sc-XRD) technique confirms the Cu(II) complex containing 2-mesityl1H-benzo[d]imidazole ligands and two chloride ligands have a highly distorted cis-square-planar geometry. The thermogravimetric analysis (TGA) shows that the Cu(II) complex is stable up to 248 degrees C. Also, the current-voltage measurements were performed to investigate the characteristic of photodiode based on copper complex in darkness and under solar simulator. The fundamental electrical parameters of fabricated diode were obtained using Thermionic theory and modified Norde function. The manufactured device exhibits a good response to light with the defined rise and fall time of 351 ms and 622 ms under 100 mWcm(-2) solar illumination, respectively. Furthermore, frequency dependent capacitance and conductance measurements were performed in dark and under illumination. The obtained results suggest that prepared photodiode based on Cu(II) complex could be used for organic light detection in different optoelectronic applications as photodetector, photocapacitor, and photoconductor. (C) 2019 Elsevier B.V. All rights reserved.Article Photosensing Properties of Ruthenium(Ii) Complex-Based Photodiode(Springer Heidelberg, 2019) Imer, Arife Gencer; Dere, Aysegul; Al-Sehemi, Abdullah G.; Dayan, Osman; Serbetci, Zafer; Al-Ghamdi, Ahmed A.; Yakuphanoglu, FahrettinRu(II) complex containing 2,6-di(1H-pyrazol-3-yl)pyridine ligand was synthesized to prepare organic-based photodiode. After forming the back contact with aluminum metal on p-Si by thermal evaporation, Al/Ru(II) complex/p-Si heterojunction was constructed by inserting Ru(II) complex organic layer into Si substrate. The fundamental electrical parameters and photosensing properties of fabricated heterojunction were investigated by current-voltage and capacitance-voltage measurements under the dark and different light intensities. The studied device exhibits a good rectifying property with rectification ratio of 2.4x10(4) at +/- 7V. It is observed that the photosensing properties such as light sensitivity and photoconductive responsivity of the photodiode based on Ru(II) complex are strongly dependent on the illumination power. The transient measurements show that the heterojunction device has a good photo switching property in the application of the photodiode, photoconductor and photocapacitor. The obtained results declare that the fabricated Ru(II)-based heterojunction device can be used in the organic-based optoelectronic device applications as a photodiode, photosensor, and optical sensor.Article Physical Properties of Ultrasonically Spray Deposited Yttrium-Doped Sno2 Nanostructured Films: Supported by Dft Study(Springer Heidelberg, 2021) Kaya, Esra; Ugur, Ali; Imer, Arife Gencer; Aycibin, Murat; Ocak, Yusuf SelimThe physical properties of ultrasonically spray deposited Yttrium (Y) doped tin dioxide (SnO2) are experimentally and theoretically investigated. The different diagnostics techniques such as X-ray diffraction (XRD), UV-Vis, scanning electron microscopy (SEM) and Hall effect measurements were performed to analyze the influence of yttrium doping ratio on the structural, optical and electrical properties of Y-doped SnO2 nanostructured films. Additionally, density functional theory (DFT) is applied to calculate and check the energy gap, lattice parameters and optical properties of SnO2 with different Y doping ratios. Super cell of Y-doped SnO2 was formed using Wien2k, and analyzed to physical properties of un-doped and Y doped stoichiometry with different ratios. Theoretical results are in agreement with the experimental results and the literature reports. Experimental results show that the optical band gap of fabricated sample increases with the increasing the Y doping amount in the tin dioxide film. The same tendency of energy band gap is observed with DFT calculation for Y-doped SnO2 compound. Theoretical results also show that the lattice parameter is nearly the same for pure and Y-doped SnO2 case, attributed to a change in the stoichiometry owing to metal doping. XRD results reveal that the all fabricated films are polycrystalline in the tetragonal Bravais lattice of tin dioxide(,) and the crystallite size, the crystalline orientation are affected by the Y doping level. The nanosized grains of the produced films are manipulated with increasing the Y dopant confirmed by the SEM. Y doped nanostructured films show the higher optical transmittance about 90% in ultra-violet region. Optical band gap gets widen from 3.689 to 3.810 eV with increasing the dopant amount. From Hall effect results, lower resistivity, higher carrier concentration and high enough mobility have been achieved by Y doping for the sample 5 at% Y:SnO2 based TCO film. The obtained results declared that Yttrium doping has an important effect on the optoelectronic properties, in particular, transparency and conductivity of SnO2 nanostructured film.Article Spin Kaplama Yöntemiyle Hazırlanan Organik Arayüzeyi İçeren Al/p‐si Diyotunun Fotovoltaik Parametreleri Üzerine Aydınlanmanın Etkisi(2017) Tombak, Ahmet; Imer, Arife Gencer; Korkut, AbdulkadirBu çalışmada, organik ara yüzey olarak brom timol mavisi (BTB) kullanılarak foto voltaik aygıt uygulaması rapor edilmiştir. Kimyasal olarak temizlenen tabanın mat yüzeyine ısıl buharlaştırma yöntemiyle Al arka kontak oluşturulduktan sonra, dönel kaplama yardımıyla organik ara yüzey tabakası Si taban üzerine kaplanmıştır. Aygıt üretimini tamamlamak için, bu organik ince filmin üzerine Al üst kontaklar oluşturulmuştur. Aygıtın foto voltaik özelliklerini iyileştirmek amacıyla hazırlanan örnek farklı şiddetlerdeki aydınlamaya maruz bırakılmıştır. Farklı aydınlanmalar altında aygıtın açık devre voltajı (Voc), kısa devre akımı (Isc) ve çıkış gücü (P) gibi temel güneş pili parametreleri belirlenmiştir. Aydınlanma şiddetinin artması ile fotoakım ve fotogerilim değerleri artmıştır. Ayrıca, yüksek ve düşük frekans değerlerinde aygıt sığasının voltaj bağımlılığı rapor edilmiştir. Aydınlanma şiddetinin üretilen aygıtın fotovoltaik parametreleri üzerinde önemli bir etkisinin olduğu sonucuna varılmıştır.