On Differential Depletion Length of Schottky Diodes With Copper-Nickel Alloy Metalof Front Contact

Abstract

This work was prepared in two sections; the first section describes how to alloy Schottky diodes and aimsto understand how metal alloys affect the essential parameters of Schottky diodes at the metal–semiconductor interface.The second section covers the varying differential depletion length in (Cu% Ni%)/n–Si/Al binary-alloyed Schottky diodes.After collecting data, the characteristics of Schottky diodes are calculated by plotting them with an increasing percentageratio of the first element. We see that alloyed Schottky diode characteristics significantly depend on the mass percentageratio of the first element. Significant results are seen: first,Vbi(built-in potential) directly affects the characteristicsof Schottky diodes with a turning point occurring at theVbipoint on the axis, and second, the built-in potential playsa key role in Schottky diode characteristics. Estimation of the depletion length depends on the built-in potential. Forthe forward and reverse bias cases, the depletion length versus voltage graphs are identical, but with their symmetrymirrored. Analyzing the differential depletion lengths, it is easily seen that they have higher or lower values comparedto the zero depletion length for the forward and reverse bias cases, respectively. When the depletion length formula isexpanded in a series, new equations are obtained to show significant effects on Schottky diode characteristics.