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Studying Structural, Electronic and Optical Properties of Zinc-Blende Ga1-Xalxp at Normal and Under Pressure by Means of First Principle

dc.authorscopusid 7005168194
dc.authorscopusid 35290530300
dc.authorscopusid 6508291264
dc.authorscopusid 36931257700
dc.authorscopusid 55538691000
dc.authorscopusid 54972331600
dc.authorscopusid 57213886294
dc.contributor.author Moussa, R.
dc.contributor.author Abdiche, A.
dc.contributor.author Khenata, R.
dc.contributor.author Rai, D.P.
dc.contributor.author Ahmed, W.K.
dc.contributor.author Omran, S.B.
dc.contributor.author Soyalp, F.
dc.date.accessioned 2025-05-10T17:00:11Z
dc.date.available 2025-05-10T17:00:11Z
dc.date.issued 2015
dc.department T.C. Van Yüzüncü Yıl Üniversitesi en_US
dc.department-temp Moussa R., Physics Department, University of Sidi-bel-Abbes, Sidi-bel-Abbes, 22000, Algeria; Abdiche A., Computational Materials Laboratory, University of Sidi-bel-Abbes, Sidi-Belabbes, 22000, Algeria; Khenata R., Laboratoire de Physique Quantique et de Modélisation Mathématique (LPQ3M), Département de Technologie, Université de Mascara, Mascara, 29000, Algeria; Rai D.P., Dept. of Physics, Pachhunga University College, Aizawl, 796001, India; Ahmed W.K., ERU, College of Engineering, United Arab Emirates University, Al Ain, United Arab Emirates; Omran S.B., Department of Physics and Astronomy, College of Science, King Saud University, PO Box 2455, Riyadh, 11451, Saudi Arabia; Murtaza G., Materials Modeling Lab, Department of Physics, Islamia College University, Peshawar, Pakistan; Soyalp F., Theoretical Physics Research Laboratory, Uzüncü Yil Üniversitezi Van, Turkey en_US
dc.description.abstract Structural, electronic and optical properties of the zinc-blende Ga1-xAlxP ternary alloys with their ordered AlP and GaP binary compounds have been investigated, using the full potential linearized augmented plane wave method in conjunction with the density functional theory. The total energies are carried out to calculate the lattice constant, bulk modulus and its pressure derivative of the zincblende AlP, GaP binary compounds and their corresponding ternary Ga1-xAlxP solid solutions for the compositions (x = 0.25, 0.50 and 0.75). The band gap energies and the optical properties of these materials are investigated at normal pressure condition as well as under high pressure levels. The estimated results obtained from this work are justified, discussed and compared with the experimental data and other available theoretical works. © 2015 IOP Publishing Ltd. en_US
dc.identifier.doi 10.1088/2053-1591/2/10/105904
dc.identifier.issn 2053-1591
dc.identifier.issue 10 en_US
dc.identifier.scopus 2-s2.0-84954549950
dc.identifier.scopusquality Q3
dc.identifier.uri https://doi.org/10.1088/2053-1591/2/10/105904
dc.identifier.uri https://hdl.handle.net/20.500.14720/4907
dc.identifier.volume 2 en_US
dc.identifier.wosquality Q3
dc.language.iso en en_US
dc.publisher Institute of Physics Publishing en_US
dc.relation.ispartof Materials Research Express en_US
dc.relation.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.subject Gaalp en_US
dc.subject Pressure Effect en_US
dc.subject Semiconductors en_US
dc.title Studying Structural, Electronic and Optical Properties of Zinc-Blende Ga1-Xalxp at Normal and Under Pressure by Means of First Principle en_US
dc.type Article en_US

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