Studying Structural, Electronic and Optical Properties of Zinc-Blende Ga1-Xalxp at Normal and Under Pressure by Means of First Principle
dc.authorscopusid | 7005168194 | |
dc.authorscopusid | 35290530300 | |
dc.authorscopusid | 6508291264 | |
dc.authorscopusid | 36931257700 | |
dc.authorscopusid | 55538691000 | |
dc.authorscopusid | 54972331600 | |
dc.authorscopusid | 57213886294 | |
dc.contributor.author | Moussa, R. | |
dc.contributor.author | Abdiche, A. | |
dc.contributor.author | Khenata, R. | |
dc.contributor.author | Rai, D.P. | |
dc.contributor.author | Ahmed, W.K. | |
dc.contributor.author | Omran, S.B. | |
dc.contributor.author | Soyalp, F. | |
dc.date.accessioned | 2025-05-10T17:00:11Z | |
dc.date.available | 2025-05-10T17:00:11Z | |
dc.date.issued | 2015 | |
dc.department | T.C. Van Yüzüncü Yıl Üniversitesi | en_US |
dc.department-temp | Moussa R., Physics Department, University of Sidi-bel-Abbes, Sidi-bel-Abbes, 22000, Algeria; Abdiche A., Computational Materials Laboratory, University of Sidi-bel-Abbes, Sidi-Belabbes, 22000, Algeria; Khenata R., Laboratoire de Physique Quantique et de Modélisation Mathématique (LPQ3M), Département de Technologie, Université de Mascara, Mascara, 29000, Algeria; Rai D.P., Dept. of Physics, Pachhunga University College, Aizawl, 796001, India; Ahmed W.K., ERU, College of Engineering, United Arab Emirates University, Al Ain, United Arab Emirates; Omran S.B., Department of Physics and Astronomy, College of Science, King Saud University, PO Box 2455, Riyadh, 11451, Saudi Arabia; Murtaza G., Materials Modeling Lab, Department of Physics, Islamia College University, Peshawar, Pakistan; Soyalp F., Theoretical Physics Research Laboratory, Uzüncü Yil Üniversitezi Van, Turkey | en_US |
dc.description.abstract | Structural, electronic and optical properties of the zinc-blende Ga1-xAlxP ternary alloys with their ordered AlP and GaP binary compounds have been investigated, using the full potential linearized augmented plane wave method in conjunction with the density functional theory. The total energies are carried out to calculate the lattice constant, bulk modulus and its pressure derivative of the zincblende AlP, GaP binary compounds and their corresponding ternary Ga1-xAlxP solid solutions for the compositions (x = 0.25, 0.50 and 0.75). The band gap energies and the optical properties of these materials are investigated at normal pressure condition as well as under high pressure levels. The estimated results obtained from this work are justified, discussed and compared with the experimental data and other available theoretical works. © 2015 IOP Publishing Ltd. | en_US |
dc.identifier.doi | 10.1088/2053-1591/2/10/105904 | |
dc.identifier.issn | 2053-1591 | |
dc.identifier.issue | 10 | en_US |
dc.identifier.scopus | 2-s2.0-84954549950 | |
dc.identifier.scopusquality | Q3 | |
dc.identifier.uri | https://doi.org/10.1088/2053-1591/2/10/105904 | |
dc.identifier.uri | https://hdl.handle.net/20.500.14720/4907 | |
dc.identifier.volume | 2 | en_US |
dc.identifier.wosquality | Q3 | |
dc.language.iso | en | en_US |
dc.publisher | Institute of Physics Publishing | en_US |
dc.relation.ispartof | Materials Research Express | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | Gaalp | en_US |
dc.subject | Pressure Effect | en_US |
dc.subject | Semiconductors | en_US |
dc.title | Studying Structural, Electronic and Optical Properties of Zinc-Blende Ga1-Xalxp at Normal and Under Pressure by Means of First Principle | en_US |
dc.type | Article | en_US |