Characterization of the Ito/P-si Contacts Produced by Thermal Evaporation
| dc.authorscopusid | 56572816700 | |
| dc.contributor.author | Ozkartal, A. | |
| dc.date.accessioned | 2025-05-10T17:01:45Z | |
| dc.date.available | 2025-05-10T17:01:45Z | |
| dc.date.issued | 2019 | |
| dc.department | T.C. Van Yüzüncü Yıl Üniversitesi | en_US |
| dc.department-temp | Ozkartal A., Department of Physics, Faculty of Science, University of Van Yüzüncü Yıl, Van, 65080, Turkey | en_US |
| dc.description.abstract | Indium-tin-oxide (ITO)/p-Si heterojunctions were produced by thermal evaporation using a vacuum coating unit. Cleaning process for the p-Si (1 0 0) crystal was carried out according to the conventional procedure. Prior to ITO evaporation, ohmic contact was made on the back side of the p-Si using Al (99.999%) metal. Optical transmission measurements of the ITO film was performed using a UV–Vis spectrophotometer. The fact that the ITO film shows a sharp absorbtion in a certain photon energy range points out it has a semiconductor property. So, optical band-gap of the ITO film was determined as 3.85 eV. The structural properties of the films were examined by x-ray diffraction spectroscopy (XRD). Current-voltage (I–V) measurements of the ITO/p-Si heterojuntions were performed under illumination and in dark to reveal photovoltaic and electrical properties of them, respectively. It is discovered from the I–V measurements that the ITO/p-Si heterojuctions have shown rectifier properties and exhibited low photovoltaic characteristic. © 2019 Elsevier Ltd | en_US |
| dc.identifier.doi | 10.1016/j.vacuum.2019.108799 | |
| dc.identifier.issn | 0042-207X | |
| dc.identifier.scopus | 2-s2.0-85069612446 | |
| dc.identifier.scopusquality | Q1 | |
| dc.identifier.uri | https://doi.org/10.1016/j.vacuum.2019.108799 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14720/5288 | |
| dc.identifier.volume | 168 | en_US |
| dc.identifier.wosquality | Q2 | |
| dc.institutionauthor | Ozkartal, A. | |
| dc.language.iso | en | en_US |
| dc.publisher | Elsevier Ltd | en_US |
| dc.relation.ispartof | Vacuum | en_US |
| dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
| dc.rights | info:eu-repo/semantics/closedAccess | en_US |
| dc.subject | Heterojunction | en_US |
| dc.subject | Ito | en_US |
| dc.subject | Rectifier | en_US |
| dc.subject | Solar Cell | en_US |
| dc.subject | Thermal Evaporation | en_US |
| dc.subject | Thin Film | en_US |
| dc.title | Characterization of the Ito/P-si Contacts Produced by Thermal Evaporation | en_US |
| dc.type | Article | en_US |