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Electrical Characteristics of Organic/Inorganic Pt(Ii) Complex/P-si Semiconductor Contacts

dc.authorid Gulcan, Mehmet/0000-0002-3921-8811
dc.authorwosid Gülcan, Mehmet/Aat-1504-2021
dc.authorwosid Gencer Imer, Arife/Gyd-6983-2022
dc.authorwosid Sönmez, Mehmet/V-5046-2018
dc.contributor.author Imer, A. Gencer
dc.contributor.author Temirci, C.
dc.contributor.author Gulcan, M.
dc.contributor.author Sonmez, M.
dc.date.accessioned 2025-05-10T17:43:03Z
dc.date.available 2025-05-10T17:43:03Z
dc.date.issued 2014
dc.department T.C. Van Yüzüncü Yıl Üniversitesi en_US
dc.department-temp [Imer, A. Gencer; Temirci, C.] Yuzuncu Yil Univ, Fac Sci, Dept Phys, TR-65080 Van, Turkey; [Gulcan, M.] Yuzuncu Yil Univ, Fac Sci, Dept Chem, TR-65080 Van, Turkey; [Sonmez, M.] Gaziantep Univ, Fac Sci & Arts, Dept Chem, TR-27310 Gaziantep, Turkey en_US
dc.description Gulcan, Mehmet/0000-0002-3921-8811 en_US
dc.description.abstract We produced Pt(II)) complexes using the bidentate ligand N-aminopyrimidine-2-thione (APTH). The optical transmission of thin Pt-APTH films was measured. The optical bandgap of the material was 2.58 eV. With the expectation that it might have semiconductor properties and that the Pt-APTH complex might exhibit rectifier behavior when brought into appropriate contact with a semiconductor, we fabricated Pt-APTH/p-Si contacts by direct addition of a solution of Pt-APTH to the front side of p-Si wafers. Forward bias current-voltage measurements revealed satisfactory rectifying behavior for the Pt-APTH/p-Si contacts, with a mean rectification ratio of 4.40 x 10(2) and a mean barrier height of 0.765 eV. Cheung and Norde functions were used to obtain and verify some electrical characteristics of the contacts. The results obtained from both methods are compared and discussed. (C) 2014 Elsevier Ltd. All rights reserved. en_US
dc.description.sponsorship Yuzuncu Yil University Scientific Research Management Office (BAPB) en_US
dc.description.sponsorship We would like to thank the Yuzuncu Yil University Scientific Research Management Office (BAPB) for their support. en_US
dc.description.woscitationindex Science Citation Index Expanded - Conference Proceedings Citation Index - Science
dc.identifier.doi 10.1016/j.mssp.2014.03.035
dc.identifier.endpage 36 en_US
dc.identifier.issn 1369-8001
dc.identifier.issn 1873-4081
dc.identifier.scopusquality Q1
dc.identifier.startpage 31 en_US
dc.identifier.uri https://doi.org/10.1016/j.mssp.2014.03.035
dc.identifier.uri https://hdl.handle.net/20.500.14720/15731
dc.identifier.volume 28 en_US
dc.identifier.wos WOS:000345645000006
dc.identifier.wosquality Q2
dc.language.iso en en_US
dc.publisher Elsevier Sci Ltd en_US
dc.relation.ispartof International Semiconductor Science and Technology Conference (ISSTC) -- JAN 13-15, 2014 -- Istanbul, TURKEY en_US
dc.relation.publicationcategory Konferans Öğesi - Uluslararası - Kurum Öğretim Elemanı en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.subject Contact en_US
dc.subject Organic en_US
dc.subject Rectifier en_US
dc.subject Schottky en_US
dc.subject Diode en_US
dc.title Electrical Characteristics of Organic/Inorganic Pt(Ii) Complex/P-si Semiconductor Contacts en_US
dc.type Conference Object en_US

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