In Al N-Si Schottky Diodes Effects of Interface States on I-V, C-V, C-F Characteristics
| dc.contributor.advisor | Batı, Bahri | |
| dc.contributor.author | Seymen, Halil | |
| dc.date.accessioned | 2025-06-30T15:51:43Z | |
| dc.date.available | 2025-06-30T15:51:43Z | |
| dc.date.issued | 2007 | |
| dc.identifier.uri | https://tez.yok.gov.tr/UlusalTezMerkezi/TezGoster?key=ePX_SaJ0b35Gq45swKG3lIWmNAEcX7v6KcYCncRaIzZuJh9YFy6Dq6hrrztxxfbA | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14720/27141 | |
| dc.language.iso | tr | |
| dc.subject | Fizik ve Fizik Mühendisliği | |
| dc.subject | Physics and Physics Engineering | en_US |
| dc.title | In Al N-Si Schottky Diodes Effects of Interface States on I-V, C-V, C-F Characteristics | |
| dc.title | Al N-Si Schottky Diyotlarında Arayüzey Hallerinin ve Seri Direncin I-V, C-V, C-F Karakteristiklerine Etkileri | en_US |
| dc.type | Master Thesis | en_US |
| dspace.entity.type | Publication | |
| gdc.coar.type | text::thesis::master thesis | |
| gdc.description.department | Fen Bilimleri Enstitüsü / Fizik Ana Bilim Dalı | |
| gdc.description.endpage | 52 | |
| gdc.identifier.yoktezid | 200946 |