Modification in the Electronic Parameters of M/P-si Hybrid Device by Psp Functional Dye Interface With Different Contact Metals (M:ag, Cu, Pd, Sn)

Abstract

In this study, a functional organic dye of phenol-sulfonphthalein (PSP) was used as an interfacial layer via a spin coating method, its impact on the electronic parameters including Schottky barrier height (Ob), ideality factor (n) and series resistance (Rs) was investigated for different top metal contacts. An Al metal was employed for Ohmic contact, while Schottky contacts were formed using different metals as Ag, Cu, Pd, and Sn metals via thermal evaporation technique during the fabrication process of M/PSP/p-Si hybrid devices (M: Ag, Cu, Pd, Sn) and their references (M/p-Si). The electrical performance of all references and Ag/PSP/p-Si, Cu/PSP/p-Si, Pd/PSP/p-Si, and Sn/PSP/p-Si hybrid structures were evaluated by performing current-voltage (I-V) and capacitance -voltage (C-V) measurements at the room temperature. The obtained results confirm that barrier height of all devices with and without the PSP organic interlayer depends on metal work function. The PSP interface layer leads to increase in barrier height value of the M/PSP/p-Si devices as compared to that of reference (M/p-Si) ones. This increment value for hybrid structures with the presence of PSP layer related with the metal work function for Ag, Cu, Pd, and Sn top metal. The highest Ob value of 0.760 eV and the lowest one as 0.618 eV were obtained by TE theory for the Sn/PSP/p-Si, Ag/PSP/p-Si device, respectively. The obtained results confirmed that PSP interface material and the work function of top contact metals are strongly impact on the modifying of the electronic parameters of fabricated devices.