Comparison of Resistance Parameters of Ohmic and Non-Ohmic Schottky Diodes by Applying Forward and Reverse Bias Voltage
Abstract
Yeni üretilmiş Metal/p-Si/Cu (omik) ve Metal/p-Si/Cu (non-omik), Schottky diyotların direncine ait parametrelerin nasıl değiştiği araştırılmıştır. Ters ve düz besleme durumunda Schottky diyot parametreleri hesaplanmış, parametreler omik ve nonomik olmasına göre incelenmiştir. Bu verilerden yararlanılarak diyotun toplam direnci de hesaplanmıştır. Yeni bir matematik yaklaşımla 'seri direnç' incelenmiş ve ilginç sonuçlara ulaşılmıştır.
Newly produced Metal/p-Si/Cu (omic) and Metal/p-Si/Cu (non-omic) investigated how the parameters for the resistance of Schottky diodes changed. Schottky diode parameters were calculated in case of reverse and forward bias, and parameters were examined according to omic and non-omic. Using this data, the total resistance of the diode was also calculated. 'serial resistance' was examined with a new mathematical approach and interesting results were reached.
Newly produced Metal/p-Si/Cu (omic) and Metal/p-Si/Cu (non-omic) investigated how the parameters for the resistance of Schottky diodes changed. Schottky diode parameters were calculated in case of reverse and forward bias, and parameters were examined according to omic and non-omic. Using this data, the total resistance of the diode was also calculated. 'serial resistance' was examined with a new mathematical approach and interesting results were reached.
Description
Keywords
Fizik ve Fizik Mühendisliği, Physics and Physics Engineering
Turkish CoHE Thesis Center URL
WoS Q
Scopus Q
Source
Volume
Issue
Start Page
End Page
95