A New Approximation: From Barrier Lowering To Interface State Density

Abstract

In this study, a set of the interface state density (ISD) formulae was derived from the Schottky effect. In contrast to the conventional approximation, a new approximation for the ISD formulae gives very unusual values in the case of forward bias or reverse bias. The former ISD formula contains the oxide thickness in the metal-semiconductor interface region, whereas the new approximation formulae do not contain the oxide thickness. They depend on the applied voltage and built-in potential in the case of both bias. Besides, lowering barrier height is called the Schottky effect. A couple of the new ISD formulae can be proportioned to each other. The ratio is a new coefficient. Moreover, the coefficient is inversely proportional with the a cceptor concentration and third power of zero-voltage depletion length. Moreover, that fraction is inversely proportional to the acceptor concentration and cubic power to depletion length.