Effect of Surface Passivation on Capacitance-Voltage Characteristics of Sn/P-si Schottky Contacts

Abstract

We fabricated the Sn/p-Si Schottky barrier diodes with the interfacial layer metal-insulator semiconductor (D-MIS) and the surface passivation metal semiconductor MS (D-MS) by the anodization or chemical treatment method. The current voltage (I-V) and capacitance voltage (C-V) characteristics of the devices were measured at room temperature. We obtained that the excess capacitance (C-0) value of the MIS Sn/p-Si diode with the anodic oxide layer of 16.88 pF and 0.12 pF for the MS Sn/p-Si ideal diode with the surface passivation by the anodization or chemical treatment method from reverse bias C-V characteristics. Thus, we have succeeded to diminish the excess capacitance value to the limit of 0.12 pF for the MS Sn/p-Si diode by using the anodization or chemical treatment method.