Dft Study of Cscaf3: Eu
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Date
2016
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Gazi Univ
Abstract
In this article, we studied some changes on structural, optical and electronic properties of CsCaF3 when it is doped with Eu atom. All properties of doped CsCaF3 are calculated using the full potential linearized augmented plane wave to the density functional theory. The exchange-correlation potential is evaluated using generalized gradient approximation. This work presents comparison of undoped and doped with Eu atoms of CsCaF3 compound. Moreover, we show that CsCaF3: Eu has indirect band gap with the Generalized Gradient Approximation and doping makes energy band gap values decreases.
Description
Aycibin, Murat/0000-0002-2634-3082
ORCID
Keywords
Dft, Cscaf3: Eu, Optical Properties, Semiconductor, Indirect Band Transition
Turkish CoHE Thesis Center URL
WoS Q
N/A
Scopus Q
Q3
Source
Volume
29
Issue
2
Start Page
273
End Page
278