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Dft Study of Cscaf3: Eu

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Date

2016

Journal Title

Journal ISSN

Volume Title

Publisher

Gazi Univ

Abstract

In this article, we studied some changes on structural, optical and electronic properties of CsCaF3 when it is doped with Eu atom. All properties of doped CsCaF3 are calculated using the full potential linearized augmented plane wave to the density functional theory. The exchange-correlation potential is evaluated using generalized gradient approximation. This work presents comparison of undoped and doped with Eu atoms of CsCaF3 compound. Moreover, we show that CsCaF3: Eu has indirect band gap with the Generalized Gradient Approximation and doping makes energy band gap values decreases.

Description

Aycibin, Murat/0000-0002-2634-3082

Keywords

Dft, Cscaf3: Eu, Optical Properties, Semiconductor, Indirect Band Transition

Turkish CoHE Thesis Center URL

WoS Q

N/A

Scopus Q

Q3

Source

Volume

29

Issue

2

Start Page

273

End Page

278