High Frequency Energy Radiation of N-Type Semiconductors at Constant Electric and Magnetic Field
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Date
2013
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Abstract
The aim of this study is investigation of some properties of n-type doped semiconductors. Compound semiconductors having minimum points more than one, radiate high frequency energies in electric and magnetic fields at the certain values of them. Depending of the electric and magnetic field values, high frequency energy radiation states have been studied theoretically in this work. © 2013 Eladar Rasuloglu Hasanov et al.
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Source
Advanced Studies in Theoretical Physics
Volume
7
Issue
21
Start Page
1035
End Page
1042