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High Frequency Energy Radiation of N-Type Semiconductors at Constant Electric and Magnetic Field

dc.authorscopusid 24281211000
dc.authorscopusid 24281817300
dc.authorscopusid 56186362100
dc.contributor.author Hasanov, E.R.
dc.contributor.author Panahov, A.Z.
dc.contributor.author Demirel, A.I.
dc.date.accessioned 2025-05-10T16:59:52Z
dc.date.available 2025-05-10T16:59:52Z
dc.date.issued 2013
dc.department T.C. Van Yüzüncü Yıl Üniversitesi en_US
dc.department-temp Hasanov E.R., Baku State University, Baku, Azerbaijan; Panahov A.Z., Baku State University, Baku, Azerbaijan, Yuzuncu Yil Universty, Dept. of Physics, 65080 Van, Turkey; Demirel A.I., Yuzuncu Yil Universty, Dept. of Physics, 65080 Van, Turkey en_US
dc.description.abstract The aim of this study is investigation of some properties of n-type doped semiconductors. Compound semiconductors having minimum points more than one, radiate high frequency energies in electric and magnetic fields at the certain values of them. Depending of the electric and magnetic field values, high frequency energy radiation states have been studied theoretically in this work. © 2013 Eladar Rasuloglu Hasanov et al. en_US
dc.identifier.doi 10.12988/astp.2013.39104
dc.identifier.endpage 1042 en_US
dc.identifier.issn 1314-7609
dc.identifier.issue 21 en_US
dc.identifier.scopus 2-s2.0-84887183088
dc.identifier.scopusquality N/A
dc.identifier.startpage 1035 en_US
dc.identifier.uri https://doi.org/10.12988/astp.2013.39104
dc.identifier.uri https://hdl.handle.net/20.500.14720/4796
dc.identifier.volume 7 en_US
dc.identifier.wosquality N/A
dc.language.iso en en_US
dc.relation.ispartof Advanced Studies in Theoretical Physics en_US
dc.relation.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.title High Frequency Energy Radiation of N-Type Semiconductors at Constant Electric and Magnetic Field en_US
dc.type Article en_US

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