Synthesis of in Situ N-, S-, and B-Doped Few-Layer Graphene by Chemical Vapor Deposition Technique and Their Superior Glucose Electrooxidation Activity
dc.authorid | Kivrak, Hilal/0000-0001-8001-7854 | |
dc.authorid | Ulas, Berdan/0000-0003-0650-0316 | |
dc.authorscopusid | 57201153766 | |
dc.authorscopusid | 57203167255 | |
dc.authorscopusid | 58324442300 | |
dc.authorscopusid | 25959155500 | |
dc.authorwosid | Ulaş, Berdan/Aai-9979-2021 | |
dc.authorwosid | Kivrak, Hilal/Aaq-8663-2021 | |
dc.contributor.author | Caglar, Aykut | |
dc.contributor.author | Ulas, Berdan | |
dc.contributor.author | Sahin, Ozlem | |
dc.contributor.author | Kivrak, Hilal | |
dc.date.accessioned | 2025-05-10T17:25:40Z | |
dc.date.available | 2025-05-10T17:25:40Z | |
dc.date.issued | 2019 | |
dc.department | T.C. Van Yüzüncü Yıl Üniversitesi | en_US |
dc.department-temp | [Caglar, Aykut; Ulas, Berdan; Kivrak, Hilal] Van Yuzuncu Yil Univ, Fac Engn, Dept Chem Engn, TR-65000 Van, Turkey; [Sahin, Ozlem] Konya Tech Univ, Fac Engn, Chem Engn Dept, Konya, Turkey | en_US |
dc.description | Kivrak, Hilal/0000-0001-8001-7854; Ulas, Berdan/0000-0003-0650-0316 | en_US |
dc.description.abstract | At present, N-, S-, and B-doped grapheme-modified indium tin oxide (ITO) electrodes are produced and doping method effect on the glucose electrooxidation is investigated. Firstly, few-layer graphene is produced by chemical vapor deposition (CVD) method. Then, N, S, and B doping is carried out after graphene produced by CVD to prepare N-doped, B-doped, and S-doped few-layer graphene. N, S, and B doping is carried out by two different ways as (a) doping after synthesis of few-layer graphene and (b) in situ doping during few-layer graphene production. These materials are characterized by X-ray diffraction, scanning electron microscopy-energy (SEM), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). One could note that graphene and nitrogen networks are clearly visible from SEM images. Raman spectra show that B, N, and S are doped on few-layer graphene/ITO successfully. XPS results of graphene, N-doped graphene, and in situ N-doped graphene reveal that graphene and nitrogen atoms used in the preparation of the electrodes obtain mainly in their elemental state. Then, these N-, S-, B-doped and in situ N-, S-, B-doped few-layer graphene materials are coated onto indium tin oxide (ITO) to obtain N-, S-, B-doped and in situ N-, S-, B-doped ITO electrodes for glucose (C6H12O6) electrooxidation. C6H12O6 electrooxidation measurements are investigated with cyclic voltammetry, chronoamperometry, and electrochemical impedance spectroscopy measurements. As a result, in situ N-doped few-layer graphene/ITO electrode displays the best C6H12O6 electrooxidation activity with 9.12 mA.cm(-2) current density compared with other N-, S-, B-doped graphene and in situ doped S and B grapheme-modified ITO electrodes. Furthermore, this current density value for in situ N-doped few-layer graphene/ITO is highly above the values reported in the literature. In situ N-doped few-layer graphene/ITO electrode is a promising electrode for C6H12O6 electrooxidation because it exhibits the best electrocatalytic activity, stability, and resistance compared with other electrodes. | en_US |
dc.description.sponsorship | Scientific and Technological Research Council [116M004] | en_US |
dc.description.sponsorship | The Scientific and Technological Research Council, Grant/Award Number: 116M004 | en_US |
dc.description.woscitationindex | Science Citation Index Expanded | |
dc.identifier.doi | 10.1002/er.4817 | |
dc.identifier.endpage | 8216 | en_US |
dc.identifier.issn | 0363-907X | |
dc.identifier.issn | 1099-114X | |
dc.identifier.issue | 14 | en_US |
dc.identifier.scopus | 2-s2.0-85070879218 | |
dc.identifier.scopusquality | Q1 | |
dc.identifier.startpage | 8204 | en_US |
dc.identifier.uri | https://doi.org/10.1002/er.4817 | |
dc.identifier.uri | https://hdl.handle.net/20.500.14720/11432 | |
dc.identifier.volume | 43 | en_US |
dc.identifier.wos | WOS:000481967200001 | |
dc.identifier.wosquality | Q1 | |
dc.language.iso | en | en_US |
dc.publisher | Wiley | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
dc.rights | info:eu-repo/semantics/openAccess | en_US |
dc.subject | Cvd | en_US |
dc.subject | Glucose | en_US |
dc.subject | Graphene | en_US |
dc.subject | N | en_US |
dc.subject | B | en_US |
dc.subject | And S | en_US |
dc.subject | In Situ Doping | en_US |
dc.title | Synthesis of in Situ N-, S-, and B-Doped Few-Layer Graphene by Chemical Vapor Deposition Technique and Their Superior Glucose Electrooxidation Activity | en_US |
dc.type | Article | en_US |