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Ohmic and Rectifier Properties of Al/Ligand(n-apth) and Al/Cu(ii)complex Contacts

dc.authorid Goksen, Kadir/0000-0001-8790-582X
dc.authorid Gulcan, Mehmet/0000-0002-3921-8811
dc.authorscopusid 6602421311
dc.authorscopusid 8226754300
dc.authorscopusid 7801499255
dc.authorscopusid 35732479200
dc.authorwosid Sönmez, Mehmet/V-5046-2018
dc.authorwosid Gülcan, Mehmet/Aat-1504-2021
dc.authorwosid Goksen, Kadir/Kfq-6322-2024
dc.contributor.author Temirci, Cabir
dc.contributor.author Guelcan, Mehmet
dc.contributor.author Goksen, Kadir
dc.contributor.author Soenmez, Mehmet
dc.date.accessioned 2025-05-10T16:48:49Z
dc.date.available 2025-05-10T16:48:49Z
dc.date.issued 2010
dc.department T.C. Van Yüzüncü Yıl Üniversitesi en_US
dc.department-temp [Temirci, Cabir; Goksen, Kadir] Yuzuncu Yil Univ, Fac Sci & Arts, Dept Phys, TR-65080 Van, Turkey; [Guelcan, Mehmet] Yuzuncu Yil Univ, Fac Sci & Arts, Dept Chem, TR-65080 Van, Turkey; [Soenmez, Mehmet] Gaziantep Univ, Fac Sci & Arts, Dept Chem, TR-27310 Gaziantep, Turkey en_US
dc.description Goksen, Kadir/0000-0001-8790-582X; Gulcan, Mehmet/0000-0002-3921-8811 en_US
dc.description.abstract We have produced a Ligand(N-APTH) and Cu(II)Complex of bidentate ligand containing a ring of the pyrimidine. Optical transmission measurements of the Ligand(N-APTH) and Cu(II)Complex thin films were performed by using a UV-Visible (UV-VIS) spectrophotometer. From the optical measurements, it was seen that the materials show semiconductor behaviors giving appropriate bandgaps with the values of 3.15 eV and 2.36 eV for Ligand(N-APTH) and Cu(II)Complex, respectively. With the pre-assumption that the material may exhibit a rectifier or ohmic behavior when it is brought into an appropriate contact with a metal, an attempt to explore the rectifying and ohmic properties of Al/Ligand(N-APTH)/Cu and All Cu(II)Complex/Cu contacts was made. As a result of current-voltage (I-V) measurements, it was discovered that the devices show excellent rectifier properties with a rectification ratio of about 10(-3) for All Ligand(N-APTH)/Cu and 10(-5) for Al/Cu(II)Complex/Cu rectifier contacts, respectively. (C) 2010 Elsevier B.V. All rights reserved. en_US
dc.description.sponsorship Yuzuncu Yil University Scientific Research Management Office (BAPB) en_US
dc.description.sponsorship The authors would like to thank Yuzuncu Yil University Scientific Research Management Office (BAPB) for their support. en_US
dc.description.woscitationindex Science Citation Index Expanded
dc.identifier.doi 10.1016/j.mee.2010.03.004
dc.identifier.endpage 2287 en_US
dc.identifier.issn 0167-9317
dc.identifier.issn 1873-5568
dc.identifier.issue 11 en_US
dc.identifier.scopus 2-s2.0-77955492880
dc.identifier.scopusquality Q2
dc.identifier.startpage 2282 en_US
dc.identifier.uri https://doi.org/10.1016/j.mee.2010.03.004
dc.identifier.uri https://hdl.handle.net/20.500.14720/1652
dc.identifier.volume 87 en_US
dc.identifier.wos WOS:000281420900046
dc.identifier.wosquality Q3
dc.language.iso en en_US
dc.publisher Elsevier en_US
dc.relation.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.subject Schottky Barrier en_US
dc.subject Rectification en_US
dc.subject Thermionic Emission en_US
dc.subject Organic Compounds en_US
dc.title Ohmic and Rectifier Properties of Al/Ligand(n-apth) and Al/Cu(ii)complex Contacts en_US
dc.type Article en_US

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