The Current-Voltage and Capacitance-Voltage Characteristics of Cu/Rhodamine 101/P-si Contacts

Abstract

The organic compound rhodamine 101 (Rh 101) was evaporated on the surface of an inorganic semiconductor p-type Si substrate. The current-voltage (I - V) and capacitance-voltage (C - V) measurements of the samples were carried out at room temperature and in the dark. From the I - V characteristics it was seen that the Cu/Rh 101/p-Si contacts show a rectifying behavior. An ideality factor value of 1.54 and a barrier height value of 0.78eV for the Cu/Rh 101/p-Si contact were determined from the forward bias I - V characteristics. A barrier height value of 0.97 eV was obtained from the capacitance voltage (C - V) characteristics. It has been seen that the values of the barrier height are significantly larger than those of conventional Schottky diodes. (C) 2004 Elsevier B.V. All rights reserved.