The Current-Voltage and Capacitance-Voltage Characteristics of Cu/Rhodamine 101/P-si Contacts
| dc.authorscopusid | 6602421311 | |
| dc.authorscopusid | 6603796843 | |
| dc.authorwosid | Çakar, Merve/O-4791-2018 | |
| dc.contributor.author | Temirci, C | |
| dc.contributor.author | Çakar, M | |
| dc.date.accessioned | 2025-05-10T17:38:23Z | |
| dc.date.available | 2025-05-10T17:38:23Z | |
| dc.date.issued | 2004 | |
| dc.department | T.C. Van Yüzüncü Yıl Üniversitesi | en_US |
| dc.department-temp | Yuzuncu Yil Univ, Fac Sci & Arts, Dept Phys, TR-65080 Van, Turkey; Univ Kahramanmaras, Fac Sci & Arts, Dept Chem, Sutcu Imam, Kahramanmaras, Turkey | en_US |
| dc.description.abstract | The organic compound rhodamine 101 (Rh 101) was evaporated on the surface of an inorganic semiconductor p-type Si substrate. The current-voltage (I - V) and capacitance-voltage (C - V) measurements of the samples were carried out at room temperature and in the dark. From the I - V characteristics it was seen that the Cu/Rh 101/p-Si contacts show a rectifying behavior. An ideality factor value of 1.54 and a barrier height value of 0.78eV for the Cu/Rh 101/p-Si contact were determined from the forward bias I - V characteristics. A barrier height value of 0.97 eV was obtained from the capacitance voltage (C - V) characteristics. It has been seen that the values of the barrier height are significantly larger than those of conventional Schottky diodes. (C) 2004 Elsevier B.V. All rights reserved. | en_US |
| dc.description.woscitationindex | Science Citation Index Expanded | |
| dc.identifier.doi | 10.1016/j.physb.2004.01.149 | |
| dc.identifier.endpage | 458 | en_US |
| dc.identifier.issn | 0921-4526 | |
| dc.identifier.issn | 1873-2135 | |
| dc.identifier.issue | 1-4 | en_US |
| dc.identifier.scopus | 2-s2.0-1942421155 | |
| dc.identifier.scopusquality | Q2 | |
| dc.identifier.startpage | 454 | en_US |
| dc.identifier.uri | https://doi.org/10.1016/j.physb.2004.01.149 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14720/14686 | |
| dc.identifier.volume | 348 | en_US |
| dc.identifier.wos | WOS:000221225400061 | |
| dc.identifier.wosquality | N/A | |
| dc.language.iso | en | en_US |
| dc.publisher | Elsevier | en_US |
| dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
| dc.rights | info:eu-repo/semantics/closedAccess | en_US |
| dc.subject | Organic Compound | en_US |
| dc.subject | Rhodamine 101 | en_US |
| dc.subject | Schottky Barrier | en_US |
| dc.subject | Diodes | en_US |
| dc.subject | Rectifying Behavior | en_US |
| dc.title | The Current-Voltage and Capacitance-Voltage Characteristics of Cu/Rhodamine 101/P-si Contacts | en_US |
| dc.type | Article | en_US |